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EGP50F

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size332KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Download Datasheet Parametric View All

EGP50F Overview

Rectifier Diode,

EGP50F Parametric

Parameter NameAttribute value
package instructionO-PALF-W2
Reach Compliance Codeunknown
Is SamacsysN
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JEDEC-95 codeDO-27
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage300 V
Maximum reverse current5 µA
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BL
FEATURES
GALAXY ELECTRICAL
EGP50A(Z) --- EGP50G(Z)
VOLTAGE RANGE: 50 --- 400 V
CURRENT:
5.0
A
HIGH EFFICIENCY RECTIFIERS
Low cost
Diffused junction
Low leakage
Low forward voltage
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO -
27
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals:
Solderable
per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight:
0.041 ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EGP
50A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@
5.0
A
Maximum reverse current
@T
A
=25
at rated DC blocking voltage @T
A
=125
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse uoltage of 4.0V DC.
3.Thermal resistance f rom junction to ambient.
EGP
50B
100
70
100
EGP
50C
150
105
150
5.0
EGP
50D
200
140
200
EGP
50F
300
210
300
EGP
50G
400
280
400
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JL
T
J
T
STG
50
35
50
@T
L
=55
150
A
0.95
5.0
50
50
95
5.0
- 55 ---- + 125
- 55 ---- + 150
1.25
V
A
ns
pF
/W
(Note2)
(Note3)
75
Operating junction temperature range
www.galaxycn.com
Document Number
1762173
BL
GALAXY ELECTRICAL
1.

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