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2SB1530

Description
Silicon PNP Triple Diffused
CategoryDiscrete semiconductor    The transistor   
File Size29KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SB1530 Overview

Silicon PNP Triple Diffused

2SB1530 Parametric

Parameter NameAttribute value
Parts packaging codeTO-220FM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)2 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2SB1530
Silicon PNP Triple Diffused
Application
Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD2337
Outline
TO-220FM
12
3
1. Base
2. Collector
3. Emitter
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模拟IC Analogue and Mixed Signal

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