Transistor
2SB1537
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD2357
Unit: mm
s
q
q
q
Features
Low collector to emitter saturation voltage V
CE(sat)
.
Large collector power dissipation P
C
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
2.6±0.1
4.5±0.1
1.6±0.2
1.5±0.1
0.4max.
45°
1.0
–0.2
+0.1
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
4.0
–0.20
0.4±0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25˚C)
Ratings
–10
–10
–5
–1.2
–1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
marking
EIAJ:SC–62
Mini Power Type Package
Marking symbol :
1L
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –7V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –2V, I
C
= –100mA
**
I
C
= –500mA, I
B
= –5mA
**
V
CB
= –5V, I
E
= 50mA, f = 200MHz
V
CB
= –5V, I
E
= 0, f = 1MHz
120
45
**
min
typ
max
–1
Unit
µA
V
V
V
–10
–10
–5
200
800
– 0.15
MHz
pF
Pulse measurement
2.5±0.1
+0.25
V
1
Transistor
P
C
— Ta
1.4
2SB1537
I
C
— V
CE
–1.2
Ta=25˚C
–1.0
I
B
=–1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
– 0.4mA
– 0.2mA
–1.0
25˚C
Ta=75˚C
–25˚C
–1.2
V
CE
=–2V
I
C
— V
BE
Collector power dissipation P
C
(W)
1.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Collector current I
C
(A)
1.0
– 0.8
0.8
– 0.6
0.6
– 0.4
0.4
0.2
– 0.2
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
Collector current I
C
(A)
– 0.8
– 0.6
– 0.4
– 0.2
0
0
– 0.4 – 0.8 –1.2
–1.6
–2.0
–2.4
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
I
C
/I
B
=100
600
h
FE
— I
C
480
V
CE
=–2V
f
T
— I
E
V
CB
=–5V
Ta=25˚C
f=200MHz
Forward current transfer ratio h
FE
500
Ta=75˚C
400
25˚C
300
–25˚C
Transition frequency f
T
(MHz)
–1
–3
–10
400
320
– 0.3
– 0.1
– 0.03
– 0.01
240
200
160
100
80
– 0.003
– 0.001
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
0
– 0.01 – 0.03 – 0.1 – 0.3
0
1
3
10
30
100
300
1000
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
120
Collector output capacitance C
ob
(pF)
100
I
E
=0
f=1MHz
Ta=25˚C
80
60
40
20
0
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
2
京公网安备 11010802033920号
EEWORLD
