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2SB1568

Description
Power Transistor (−80V, −4A)
CategoryDiscrete semiconductor    The transistor   
File Size62KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

2SB1568 Overview

Power Transistor (−80V, −4A)

2SB1568 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)4 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)1000
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power consumption environment30 W
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)12 MHz
VCEsat-Max1.5 V
Base Number Matches1
2SB1568
Transistors
Power Transistor (−80V,
−4A)
2SB1568
Features
1) Available in TO-220 FN package
2) Darling connection provides high
dc current gain (h
FE
)
3) Damper diode is incorporated
4) Built in resistors between base and
emitter
5) Two millimeters lower than TO-220 FP
which allows higher density mounting
6) Complementary pair with 2SD2399
External dimensions
(Unit : mm)
10.0
φ3.2
4.5
2.8
15.0
12.0
8.0
5.0
1.2
1.3
14.0
0.8
2.54
(1) (2) (3)
2.54
0.75
2.6
ROHM : TO-220FN
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Sourse)
Applications
Power amplifler
Absolute maximum rating
(Ta=25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Equivalent circuit
Limits
−80
−80
−7
−4
−6
2
30
150
−55
to
+150
Unit
V
V
V
A(DC)
A(Pulse)
W(Ta=25°C)
W(Tc=25°C)
°C
°C
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
B
R
1
R
2
E
Collector dissipation
Junction temperature
Storage temperature
R
1
=
3kΩ
R
2
=
300Ω
:
:
B : Base
C : Collector
E : Emitter
Electrical characteristics
(unless otherwise noted, Ta=25°C)
Parameter
Collector−base
breakdown voltage
Collector−emitter
breakdown voltage
Collector cutoff current
Symbol
BV
CBO
BV
CEO
BV
EBO
Min.
−80
−80
−7
1000
Typ.
5000
−1.0
12
35
Max.
−100
−3
−3
10000
−1.5
Unit
V
V
V
µA
mV
V
MHz
pF
Conditions
I
C
= −50µA
I
C
= −1mA
I
E
= −5mA
V
CB
= −80V
V
EB
= −5V
V
CE
= −3V,
I
C
= −2A
I
C
/I
B
= −2A/ −4mA
V
CE
= −5V,
I
E
=
0.5A, f=10MHz
V
CB
= −10V,
I
E
=
0A, f=1MHz
I
CBO
Emitter cutoff current
I
EBO
DC current gain
1
Collector−emitter
h
FE
breakdown voltage
1
Collector−emitter
V
CE(sat)
saturation voltage
f
T
1
2
Transition frequency
Output capacitance
Cob
1 Measured using pulse current.
2 Transition frequency of the device.
Rev.A
1/3
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