Power Transistors
2SB1603, 2SB1603A
Silicon PNP epitaxial planar type
For low-voltage switching
Unit: mm
s
Features
q
q
q
15.0±0.3
3.0±0.2
4.6±0.2
φ3.2±0.1
9.9±0.3
2.9±0.2
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB1603
2SB1603A
2SB1603
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25˚C)
Ratings
–40
–50
–20
–40
–5
–8
–4
25
2
150
–55 to +150
Unit
V
13.7
–0.2
+0.5
4.1±0.2 8.0±0.2
Solder Dip
Low collector to emitter saturation voltage V
CE(sat)
High-speed switching
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
1.2±0.15
1.45±0.15
0.75±0.1
2.54±0.2
5.08±0.4
2.6±0.1
0.7±0.1
emitter voltage 2SB1603A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
7°
1 2 3
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SB1603
2SB1603A
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
I
C
= –2A, I
B1
= – 0.2A, I
B2
= 0.2A
Conditions
V
CB
= –40V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –1A
I
C
= –2A, I
B
= – 0.1A
I
C
= –2A, I
B
= – 0.1A
V
CE
= –5V, I
C
= – 0.5A, f = 10MHz
150
0.3
0.4
0.1
–20
–40
45
90
260
– 0.5
–1.5
V
V
MHz
µs
µs
µs
min
typ
max
–50
–50
Unit
µA
µA
V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
1
Power Transistors
P
C
— Ta
40
–6
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=2.0W)
2SB1603, 2SB1603A
I
C
— V
CE
I
B
=–80mA
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=20
–30
–10
–3
–1
T
C
=25˚C
Collector power dissipation P
C
(W)
35
30
25
20
15
10
5
0
0
25
–5
Collector current I
C
(A)
–4
–50mA
–45mA
–40mA
–35mA
–30mA
(1)
–3
–25mA
–20mA
T
C
=100˚C
25˚C
–25˚C
–2
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–15mA
–10mA
(2)
(3)
–1
–5mA
0
50
75
100
125
150
0
–2
–4
–6
–8
–10
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
–100
–1000
I
C
/I
B
=20
h
FE
— I
C
1000
V
CE
=–2V
T
C
=100˚C
25˚C
–25˚C
–30
–10
–3
–1
300
100
30
10
3
1
0.3
f
T
— I
C
V
CE
=–2V
f=10MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
–10
–3
–1
T
C
=–25˚C
25˚C
100˚C
–100
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
– 0.3
– 0.1
– 0.01 – 0.03 – 0.1 – 0.3
Transition frequency f
T
(MHz)
–1
–3
–10
–30
–300
–1
–3
–10
0.1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
t
on
, t
stg
, t
f
— I
C
10
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(–I
B1
=I
B2
)
V
CC
=–20V
T
C
=25˚C
t
on
0.3
t
stg
t
f
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
T
C
=25˚C
Switching time t
on
,t
stg
,t
f
(
µs
)
3
Collector current I
C
(A)
–10
–3
–1
I
CP
10ms
I
C
1s
t=1ms
1
0.1
– 0.3
– 0.1
– 0.03
0.03
0.01
0
–1
–2
–3
–4
–5
–6
–7
–8
– 0.01
–1
–3
–10
–30
2SB1603A
–100 –300 –1000
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
2SB1603