2SB1605 datasheet, PDF - EEWORLD Datasheet

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2SB1605: DescriptionSilicon PNP epitaxial planar type(For low-freauency power amplification); CategoryDiscrete semiconductor The transistor; File Size30KB，2 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SB1605 Overview

Silicon PNP epitaxial planar type(For low-freauency power amplification)

2SB1605 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-220E
package instruction	TO-220E, FULL PACK-3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

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Power Transistors

2SB1605, 2SB1605A

Silicon PNP epitaxial planar type

For low-freauency power amplification

s

Features

q

Unit: mm

High forward current transfer ratio h

FE

which has satisfactory linearity

Low collector to emitter saturation voltage V

CE(sat)

Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

(T

C

=25˚C)

Ratings

–60

–80

–60

–80

–5

–3

35

2

150

–55 to +150

Unit

4.6±0.2

φ3.2±0.1

9.9±0.3

2.9±0.2

Parameter

Collector to

base voltage

Collector to

2SB1605

2SB1605A

2SB1605

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

4.1±0.2 8.0±0.2

Solder Dip

s

Absolute Maximum Ratings

15.0±0.3

3.0±0.2

13.7

–0.2

+0.5

V

1.2±0.15

1.45±0.15

0.75±0.1

2.54±0.2

5.08±0.4

1 2 3

2.6±0.1

0.7±0.1

emitter voltage 2SB1605A

Emitter to base voltage

Peak collector current

Collector current

Collector power T

C

=25°C

dissipation

Ta=25°C

Junction temperature

Storage temperature

V

A

W

˚C

7°

1:Base

2:Collector

3:Emitter

TO–220E Full Pack Package

s

Electrical Characteristics

Parameter

Collector cutoff

current

Collector cutoff

current

Emitter cutoff current

Collector to emitter

voltage

2SB1605

2SB1605A

2SB1605

2SB1605A

2SB1605

2SB1605A

(T

C

=25˚C)

Symbol

I

CES

I

CEO

I

EBO

V

CEO

h

FE1*

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

I

C

= –1A, I

B1

= – 0.1A, I

B2

= 0.1A

Conditions

V

CE

= –60V, V

BE

= 0

V

CE

= –80V, V

BE

= 0

V

CE

= –30V, I

B

= 0

V

CE

= –60V, I

B

= 0

V

EB

= –5V, I

C

= 0

I

C

= –30mA, I

B

= 0

V

CE

= –4V, I

C

= –1A

V

CE

= –4V, I

C

= –3A

V

CE

= –4V, I

C

= –3A

I

C

= –3A, I

B

= – 0.375A

V

CE

= –10V, I

C

= – 0.5A, f = 10MHz

30

0.5

1.2

0.3

–60

–80

70

10

–1.8

–1.2

V

MHz

µs

250

min

typ

max

–200

–300

–1

Unit

µA

mA

V

Forward current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

*

h

FE1

Rank classification

Q

70 to 150

P

120 to 250

Rank

h

FE1

1

2SB1605 Related Products

	2SB1605	2SB1605A
Description	Silicon PNP epitaxial planar type(For low-freauency power amplification)	Silicon PNP epitaxial planar type(For low-freauency power amplification)
Parts packaging code	TO-220E	TO-220E
package instruction	TO-220E, FULL PACK-3	TO-220E, FULL PACK-3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	3 A	3 A
Collector-emitter maximum voltage	60 V	80 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	10
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz
Base Number Matches	1	1

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