Power Transistors
2SB1631
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s
q
q
q
5.0±0.1
Features
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
Allowing automatic insertion with radial taping
(T
C
=25˚C)
Ratings
–60
–60
–6
–6
–3
–1
15
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
2.5±0.2
C1.0
10.0±0.2
1.0
13.0±0.2
4.2±0.2
90°
2.5±0.2
1.2±0.1
18.0±0.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
C1.0
2.25±0.2
0.35±0.1
0.65±0.1
1.05±0.1
0.55±0.1
0.55±0.1
1 2 3
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
*
h
(T
C
=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
Conditions
V
CB
= –60V, I
E
= 0
V
EB
= –40V, I
C
= 0
V
EB
= –6V, I
C
= 0
I
C
= –25mA, I
B
= 0
V
CE
= –4V, I
C
= – 0.5A
I
C
= –2A, I
B
= – 0.05A
V
CE
= –12V, I
C
= – 0.2A, f = 10MHz
30
–60
300
700
–1
V
MHz
min
typ
max
–100
–100
–100
Unit
µA
µA
µA
V
FE
Rank classification
Q
300 to 500
P
400 to 700
Rank
h
FE
1
Power Transistors
P
C
— Ta
20
–6
(1) T
C
=Ta
(2) Without heat sink
(P
C
=2.0W)
T
C
=25˚C
–5
–5
I
B
=–100mA
–80mA
–60mA
–40mA
–3
–20mA
–2
–10mA
–5mA
–1
(2)
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
–2mA
0
0
– 0.4
– 0.8
2SB1631
I
C
— V
CE
–6
V
CE
=–4V
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
15
–4
Collector current I
C
(A)
–4
(1)
10
–3
–2
T
C
=125˚C
25˚C
–25˚C
5
–1
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=40
–30
–10
25˚C
–3
–1
T
C
=100˚C
–25˚C
10000
h
FE
— I
C
V
CE
=–4V
1000
f
T
— I
C
V
CE
=–12V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
3000
T
C
=100˚C
25˚C
Transition frequency f
T
(MHz)
–1
–3
–10
300
1000
–25˚C
300
100
30
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
100
10
30
3
–1
–3
–10
10
– 0.01 – 0.03 – 0.1 – 0.3
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
1000
100
I
E
=0
f=1MHz
T
C
=25˚C
30
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=40
(–I
B1
=I
B2
)
V
CC
=–50V
T
C
=25˚C
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
T
C
=25˚C
Collector output capacitance C
ob
(pF)
Switching time t
on
,t
stg
,t
f
(
µs
)
300
10
3
t
f
1
t
on
0.3
0.1
0.03
Collector current I
C
(A)
–10
–3
–1
I
CP
t=1ms
I
C
DC
10ms
100
30
t
stg
10
– 0.3
– 0.1
– 0.03
– 0.01
–1
3
1
–1
0.01
–3
–10
–30
–100
0
–2
–4
–6
–8
–3
–10
–30
–100 –300 –1000
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
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