2SB1623 datasheet, PDF - EEWORLD Datasheet

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2SB1623: DescriptionSilicon PNP epitaxial planer type(For power amplification); CategoryDiscrete semiconductor The transistor; File Size41KB，1 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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2SB1623 Overview

Silicon PNP epitaxial planer type(For power amplification)

2SB1623 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-220AB
package instruction	ROHS COMPLIANT, TO-220D-A1, 3 PIN
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	1000
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e6
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Bismuth (Sn/Bi)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz
Base Number Matches	1

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Power Transistors

2SB1623

Silicon PNP epitaxial planer type

Unit: mm

For power amplification

9.9

±0.3

4.6

±0.2

2.9

±0.2

•

High forward current transfer ratio h

FE

•

Satisfactory linearity of forward current transfer ratio h

FE

•

Dielectric breakdown voltage of the package:

>

5 kV

13.7

±0.2

4.2

±0.2

Solder Dip

15.0

±0.5

I

Features

φ

3.2

±0.1

I

Absolute Maximum Ratings

T

C

=

25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

T

C

=

25°C

T

a

=

25°C

T

j

T

stg

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

Rating

−60

−5

−8

−4

40

2.0

150

−55

to

+150

°C

Unit

V

A

W

1.4

±0.2

1.6

±0.2

0.8

±0.1

3.0

±0.5

2.6

±0.1

0.55

±0.15

2.54

±0.30

5.08

±0.50

1

2

3

1: Base

2: Collector

3: Emitter

TO-220D Package

Junction temperature

Storage temperature

I

Electrical Characteristics

T

C

=

25°C

Parameter

Collector cutoff current

Symbol

I

CBO

I

CEO

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

I

EBO

V

CEO

h

FE1

h

FE2

Base to emitter voltage (DC value)

Collector to emitter saturation voltage

V

BE

V

CE(sat)1

V

CE(sat)2

Transition frequency

Turn-on time

Storage time

Fall time

Note) *: Rank classification

Rank

h

FE2

P

Q

R

1 000 to 2 500

f

T

t

on

t

stg

t

f

*

Conditions

V

CB

= −60

V, V

BE

=

0

V

CB

= −30

V, I

B

=

0

V

EB

= −5

V, I

C

=

0

I

C

= −30

mA, I

B

=

0

V

CE

= −3

V, I

C

= −

0.5 A

V

CE

= −3

V, I

C

= −3

A

V

CE

= −3

V, I

C

= −3

A

I

C

= −3

A, I

B

= −12

mA

I

C

= −5

A, I

B

= −20

mA

V

CB

= −10

V, I

C

= −

0.5 A, f

=

1 MHz

I

C

= −3

A, I

B1

= −12

mA, I

B2

=

12 mA

V

CC

= −50

V

Min

Typ

Max

−200

−500

−2

Unit

µA

mA

V

−60

1 000

10 000

−2.5

−2

−4

20

0.3

2

0.5

V

MHz

µs

4 000 to 10 000 2 000 to 5 000

1

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