MPS6521RL1 datasheet, PDF - EEWORLD Datasheet

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MPS6521RL1: Description100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size481KB，11 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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MPS6521RL1 Overview

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN

MPS6521RL1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	EUROPEAN PART NUMBER
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	300
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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ON Semiconductort

Amplifier Transistors

COLLECTOR 3

BASE

COLLECTOR 3

BASE

1 EMITTER

NPN

MPS6521*

PNP

MPS6523

Voltage and current are negative

for PNP transistors

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

MPS6521

MPS6523

Collector–Base Voltage

MPS6521

MPS6523

Emitter–Base Voltage

Collector Current — Continuous

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

EBO

, T

stg

CBO

—

4.0

100

625

5.0

1.5

–55 to +150

—

Vdc

Symbol

CEO

—

Vdc

NPN

PNP

Unit

Vdc

*ON Semiconductor Preferred Device

mAdc

mW/°C

Watts

mW/°C

°C

CASE 29–11, STYLE 1

TO–92 (TO–226AA)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Ambient

(Printed Circuit Board Mounting)

Thermal Resistance, Junction to Case

Symbol

qJA

qJC

Max

200

83.3

Unit

°C/W

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

= 0.5 mAdc, I

= 0)

Emitter–Base Breakdown Voltage

= 10

mAdc,

= 0)

Collector Cutoff Current

= 30 Vdc, I

= 0)

= 20 Vdc, I

= 0)

MPS6521

MPS6523

(BR)CEO

(BR)EBO

CBO

—

0.05

4.0

—

Vdc

mAdc

Preferred

devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

826

March, 2001 – Rev. 1

Publication Order Number:

MPS6521/D

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