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ISL9N316AS3STL99Z

Description
Power Field-Effect Transistor, 48A I(D), 30V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size140KB,11 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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ISL9N316AS3STL99Z Overview

Power Field-Effect Transistor, 48A I(D), 30V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ISL9N316AS3STL99Z Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)48 A
Maximum drain-source on-resistance0.0155 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
ISL9N316AP3/ISL9N316AS3ST
January 2002
ISL9N316AP3/ISL9N316AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
• Fast switching
• r
DS(ON)
= 0.014
(Typ), V
GS
= 10V
• r
DS(ON)
= 0.020
(Typ), V
GS
= 4.5V
• Q
g
(Typ) = 13nC, V
GS
= 5V
• Q
gd
(Typ) = 4.5nC
• C
ISS
(Typ) = 1450pF
Applications
• DC/DC converters
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
D
GATE
SOURCE
G
DRAIN
(FLANGE)
S
TO-263AB
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Parameter
TO-220AB
Ratings
30
±
20
48
28
11
Figure 4
65
0.43
-55 to 175
Units
V
V
A
A
A
A
W
W/
o
C
o
C
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
I
D
P
D
T
J
, T
STG
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
θ
JA
= 43
o
C/W)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
Thermal Characteristics
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
2.31
62
43
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
N316AS
N316AP
Device
ISL9N316AS3ST
ISL9N316AP3
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50
©2002 Fairchild Semiconductor Corporation
Rev. B, January 2002

ISL9N316AS3STL99Z Related Products

ISL9N316AS3STL99Z ISL9N316AS3STS62Z ISL9N316AS3STL86Z
Description Power Field-Effect Transistor, 48A I(D), 30V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Power Field-Effect Transistor, 48A I(D), 30V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Power Field-Effect Transistor, 48A I(D), 30V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Is Samacsys N N N
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V
Maximum drain current (ID) 48 A 48 A 48 A
Maximum drain-source on-resistance 0.0155 Ω 0.0155 Ω 0.0155 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1
Number of terminals 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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