Transistor
2SB774
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
s
q
q
5.0±0.2
4.0±0.2
Features
High emitter to base voltage V
EBO
.
Protective diodes and resistances between emitter and base can
be omitted.
5.1±0.2
13.5±0.5
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
–30
–25
–15
–200
–100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.45
–0.1
1.27
+0.2
0.45
–0.1
1.27
+0.2
1 2 3
2.3±0.2
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –20V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –2mA
V
CE
= –2V, I
C
= –100mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 2mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
150
4
–30
–25
–15
210
90
–0.5
V
MHz
pF
460
min
typ
max
–1
–100
Unit
µA
µA
V
V
V
*
h
FE1
Rank classification
R
210 ~ 340
S
290 ~ 460
Rank
h
FE1
1
Transistor
P
C
— Ta
500
–240
Ta=25˚C
450
–200
I
B
=–1.8mA
–1.6mA
–180
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
– 0.4mA
–80
– 0.2mA
–40
2SB774
I
C
— V
CE
–200
V
CE
=–10V
I
C
— V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
–160
Collector current I
C
(mA)
400
–160
–140
–120
–100
–80
–60
–40
–20
25˚C
Ta=75˚C
–25˚C
–120
0
0
–2
–4
–6
–8
–10
–12
0
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
I
C
/I
B
=10
600
h
FE
— I
C
1000
V
CE
=–10V
f
T
— I
E
V
CB
=–10V
Ta=25˚C
Forward current transfer ratio h
FE
500
Transition frequency f
T
(MHz)
–10
–30
–100
300
400
Ta=75˚C
25˚C
300
–25˚C
200
100
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
Ta=75˚C
25˚C
–25˚C
30
100
–1
–3
–10
–30
–100
0
– 0.1 – 0.3
–1
–3
10
0.1
0.3
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
12
Collector output capacitance C
ob
(pF)
10
I
E
=0
f=1MHz
Ta=25˚C
8
6
4
2
0
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
2
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