Transistor
2SB788
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD958
6.9±0.1
1.5
2.5±0.1
1.0
1.0
2.4±0.2 2.0±0.2 3.5±0.1
Unit: mm
s
Features
q
q
q
1.5 R0.9
R0.9
0.85
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
–120
–120
–7
–50
–20
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
1:Base
2:Collector
3:Emitter
3
0.55±0.1
1.25±0.05
0.45±0.05
2
1
2.5
2.5
EIAJ:SC–71
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
NV
Conditions
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –5V, I
C
= –2mA
I
C
= –20mA, I
B
= –2mA
V
CB
= –5V, I
E
= 2mA, f = 200MHz
V
CE
= 40V, I
C
= –1mA, G
V
= 80dB,
R
g
= 100kΩ, Function = FLAT
150
150
–120
–120
–7
180
700
– 0.6
V
MHz
mV
min
typ
max
–100
–1
Unit
nA
µA
V
V
V
*
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
T
360 ~ 700
h
FE
Rank
4.1±0.2
High collector to emitter voltage V
CEO
.
Low noise voltage NV.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
0.4
1.0±0.1
R
0.
4.5±0.1
7
1
Transistor
P
C
— Ta
500
–60
V
CE
=–5V
450
–50
25˚C
2SB788
I
C
— V
BE
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
V
CE(sat)
— I
C
I
C
/I
B
=10
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
400
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
–40
Ta=75˚C
–25˚C
–30
–20
– 0.3
– 0.1
25˚C
Ta=75˚C
–10
–25˚C
– 0.03
– 0.01
– 0.1 – 0.3
0
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
–1
–3
–10
–30
–100
Ambient temperature Ta (˚C)
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA)
h
FE
— I
C
600
V
CE
=–5V
320
280
240
200
160
120
80
40
0
– 0.1 – 0.3
0
0.1
f
T
— I
E
5
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CB
=–10V
Ta=25˚C
I
E
=0
f=1MHz
Ta=25˚C
4
Forward current transfer ratio h
FE
500
Ta=75˚C
400
25˚C
–25˚C
Transition frequency f
T
(MHz)
3
300
2
200
100
1
–1
–3
–10
–30
–100
0.3
1
3
10
30
100
0
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
NV — I
C
120
V
CE
=–10V
G
V
=80dB
Function=FLAT
100
Noise voltage NV (mV)
80
R
g
=100kΩ
60
22kΩ
40
4.7kΩ
20
0
– 0.01
– 0.03
– 0.1
– 0.3
–1
Collector current I
C
(mA)
2
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