Transistor
2SB790
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD969
6.9±0.1
2.5±0.1
1.0
1.0
2.4±0.2 2.0±0.2 3.5±0.1
Unit: mm
s
Features
q
q
1.5
0.4
1.5 R0.9
R0.9
Low collector to emitter saturation voltage V
CE(sat)
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0±0.1
R
0.
0.85
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
–25
–20
–7
–1
– 0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
1:Base
2:Collector
3:Emitter
3
0.55±0.1
1.25±0.05
0.45±0.05
2
1
2.5
2.5
EIAJ:SC–71
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –25V, I
E
= 0
V
CE
= –20V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –1mA, I
B
= 0
I
C
= –10µA, I
C
= 0
V
CE
= –2V, I
C
= –0.5A
*2
V
CE
= –2V, I
C
= –1A
*2
I
C
= –500mA, I
B
= –50mA
*2
I
C
= –500mA, I
B
=
–50mA
*2
150
15
*2
min
typ
max
–100
–1
4.1±0.2
4.5±0.1
7
Unit
nA
µA
V
V
V
–25
–20
–7
90
25
– 0.4
–1.2
220
V
V
MHz
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
25
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
90 ~ 155
R
130 ~ 220
Rank
h
FE1
1
Transistor
P
C
— Ta
800
–1.2
Ta=25˚C
700
–1.0
600
500
400
300
200
100
0
0
20
40
60
80 100 120 140 160
0
0
–1
–2
–3
–4
–5
–6
I
B
=–10mA
2SB790
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
V
CE(sat)
— I
C
I
C
/I
B
=10
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
– 0.8
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
– 0.6
– 0.4
– 0.3
– 0.1
– 0.03
– 0.2
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
V
BE(sat)
— I
C
–100
h
FE
— I
C
I
C
/I
B
=10
600
V
CE
=–2V
320
f
T
— I
E
V
CB
=–10V
Ta=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
500
Transition frequency f
T
(MHz)
–1
–3
–10
–30
–10
–3
25˚C
–1
75˚C
Ta=–25˚C
Forward current transfer ratio h
FE
280
240
200
160
120
80
40
400
300 Ta=75˚C
25˚C
200
–25˚C
100
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
0
– 0.01 – 0.03 – 0.1 – 0.3
0
0.1
0.3
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
80
Collector output capacitance C
ob
(pF)
70
60
50
40
30
20
10
0
–1
I
E
=0
f=1MHz
Ta=25˚C
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
2
Microchip MCU
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