Small Signal Bipolar Transistor, 0.7A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN
| Parameter Name | Attribute value |
| Objectid | 1481158255 |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.7 A |
| Collector-emitter maximum voltage | 15 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 80 |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 125 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.2 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 250 MHz |
| VCEsat-Max | 0.12 V |
| 2SB815 | 2SD1048 | |
|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.7A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN | For General-Purpose AF Amplifier |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknown | unknow |
| ECCN code | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.7 A | 0.7 A |
| Collector-emitter maximum voltage | 15 V | 15 V |
| Configuration | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 80 | 80 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Maximum operating temperature | 125 °C | 125 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | PNP | NPN |
| Maximum power dissipation(Abs) | 0.2 W | 0.2 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON |
| Nominal transition frequency (fT) | 250 MHz | 250 MHz |
| VCEsat-Max | 0.12 V | 0.08 V |
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