2SB817 datasheet, PDF - EEWORLD Datasheet

2SB817: DescriptionPower Bipolar Transistor, 12A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-3PB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size118KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SB817 Overview

Power Bipolar Transistor, 12A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-3PB, 3 PIN

Parameter Name	Attribute value
Objectid	1483103880
Parts packaging code	TO-3PB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BALLAST RESISTANCE
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	140 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	140 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power dissipation(Abs)	100 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	15 MHz

	2SB817	2SD1047
Description	Power Bipolar Transistor, 12A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-3PB, 3 PIN	12 A, 140 V, NPN, Si, POWER TRANSISTOR
Parts packaging code	TO-3PB	TO-3PB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknown	unknow
ECCN code	EAR99	EAR99
Other features	BUILT-IN BALLAST RESISTANCE	BUILT-IN BALLAST RESISTANCE
Maximum collector current (IC)	12 A	12 A
Collector-emitter maximum voltage	140 V	140 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	140 °C	140 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	NPN
Maximum power dissipation(Abs)	100 W	100 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	15 MHz	15 MHz

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