Transistor
2SB819
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1051
6.9±0.1
1.5
2.5±0.1
1.0
1.0
2.4±0.2 2.0±0.2 3.5±0.1
Unit: mm
s
q
q
q
Features
High collector to emitter voltage V
CEO
.
Large collector power dissipation P
C
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.5 R0.9
R0.9
0.4
1.0±0.1
R
0.
0.85
0.55±0.1
0.45±0.05
1.25±0.05
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25˚C)
Ratings
–50
–40
–5
–3
–1.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
EIAJ:SC–71
M Type Mold Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE*1
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –1mA, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CE
= –5V, I
C
= –1A
*2
I
C
= –1.5A, I
B
= –0.15A
*2
I
C
= –2A, I
B
=
–0.2A
*2
150
45
*2
min
typ
max
–1
–100
–10
–50
–40
80
220
–1
–1.5
4.1±0.2
4.5±0.1
7
Unit
µA
µA
µA
V
V
V
V
MHz
pF
V
CB
= –5V, I
E
= 0.5A, f = 200MHz
V
CB
= –20V, I
E
= 0, f = 1MHz
Pulse measurement
*1
h
FE
Rank classification
Q
80 ~ 160
R
120 ~ 220
Rank
h
FE
1
Transistor
P
C
— Ta
1.2
–4.0
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
–3.5
2SB819
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
B
=–40mA
–35mA
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
V
CE(sat)
— I
C
I
C
/I
B
=10
Collector power dissipation P
C
(W)
1.0
Collector current I
C
(A)
–3.0
–2.5
–2.0
–1.5
–1.0
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
0.8
0.6
0.4
– 0.3
– 0.1
– 0.03
0.2
– 0.5
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
–100
h
FE
— I
C
I
C
/I
B
=10
600
V
CE
=–5V
240
f
T
— I
E
V
CB
=–5V
Ta=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
500
Transition frequency f
T
(MHz)
–1
–3
–10
–30
–10
–3
25˚C
–1
75˚C
Ta=–25˚C
Forward current transfer ratio h
FE
200
400
160
300
Ta=75˚C
25˚C
120
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
200
–25˚C
80
100
40
–1
–3
–10
0
– 0.01 – 0.03 – 0.1 – 0.3
0
10
30
100
300
1000 3000 10000
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
150
–60
V
CER
— R
BE
1000
Ta=25˚C
I
CEO
— Ta
V
CE
=–12V
Collector output capacitance C
ob
(pF)
Collector to emitter voltage V
CER
(V)
I
E
=0
f=1MHz
Ta=25˚C
120
–50
300
–40
I
CEO
(Ta)
I
CEO
(Ta=25˚C)
0.01
0.1
1
10
100
90
–30
30
60
–20
10
30
–10
3
0
–1
–3
–10
–30
–100
0
0.001
1
0
20
40
60
80
100
120
Collector to base voltage V
CB
(V)
Base to emitter resistance R
BE
(kΩ)
Ambient temperature Ta (˚C)
2
Transistor
Area of safe operation (ASO)
–10
–3
I
CP
I
C
Single pulse
Ta=25˚C
t=10ms
2SB819
Collector current I
C
(A)
–1
t=1s
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
– 0.1 – 0.3
–1
–3
–10
–30
–100
Collector to emitter voltage V
CE
(V)
3
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