2SB829 datasheet, PDF - EEWORLD Datasheet

2SB829: DescriptionPower Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size108KB，3 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SB829 Overview

Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN

Parameter Name	Attribute value
Objectid	1417098727
Parts packaging code	TO-218
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-218
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	90 W
Maximum power dissipation(Abs)	90 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz
VCEsat-Max	0.5 V

	2SB829	SD1065	2SD1065
Description	Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN	50V/15A Switching Applications	Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
Objectid	1417098727	-	1417098751
Parts packaging code	TO-218	-	TO-218
package instruction	FLANGE MOUNT, R-PSFM-T3	-	FLANGE MOUNT, R-PSFM-T3
Contacts	2	-	2
Reach Compliance Code	unknown	-	unknown
ECCN code	EAR99	-	EAR99
Maximum collector current (IC)	15 A	-	15 A
Collector-emitter maximum voltage	50 V	-	50 V
Configuration	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	30	-	30
JEDEC-95 code	TO-218	-	TO-218
JESD-30 code	R-PSFM-T3	-	R-PSFM-T3
Number of components	1	-	1
Number of terminals	3	-	3
Maximum operating temperature	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	FLANGE MOUNT	-	FLANGE MOUNT
Polarity/channel type	PNP	-	NPN
Maximum power consumption environment	90 W	-	90 W
Maximum power dissipation(Abs)	90 W	-	90 W
Certification status	Not Qualified	-	Not Qualified
surface mount	NO	-	NO
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON
Nominal transition frequency (fT)	20 MHz	-	20 MHz
VCEsat-Max	0.5 V	-	0.4 V

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