BAT42W / BAT43W
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• These diodes feature very low turn-on volt-
age and fast switching. These devices are
e3
protected by a PN junction guard ring
against excessive voltage, such as elec-
trostatic discharges
• These diodes are also available in the SOD123
case with the type designations BAT42W to
BAT43W and in designations LL42 to LL43
• For general purpose applications
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
17431
Mechanical Data
Case:
SOD123 Plastic case
Weight:
approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAT42W
BAT43W
Ordering code
BAT42W-GS18 or BAT42W-GS08
BAT43W-GS18 or BAT43W-GS08
L2
L3
Type Marking
Remarks
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Forward continuous current
Repetitive peak forward current
Surge forward current
Power dissipation
1)
1)
Test condition
T
amb
= 25 °C
t
p
< 1 s,
δ
< 0.5, T
amb
= 25 °C
t
p
< 10 ms, T
amb
= 25 °C
T
amb
= 65 °C
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
tot
Value
30
200
1)
500
1)
4
1)
200
1)
Unit
V
mA
mA
A
mW
Valid provided that electrodes are kept at ambient temperature
Document Number 85661
Rev. 1.3, 30-Mar-06
www.vishay.com
1
BAT42W / BAT43W
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
amb
T
stg
Value
300
1)
125
- 55 to + 125
- 55 to + 150
Unit
K/W
°C
°C
°C
Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Leakage current
1)
Forward voltage
1)
Test condition
I
R
= 100 µA (pulsed)
V
R
= 25 V
V
R
= 25 V, T
j
= 100 °C
I
F
= 200 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 2 mA
I
F
= 15 mA
Diode capacitance
Reverse recovery time
Detection efficieny
1)
Part
Symbol
V
(BR)R
I
R
I
R
V
F
Min
30
Typ.
Max
0.5
100
1000
400
650
Unit
V
µA
µA
mV
mV
mV
mV
mV
pF
ns
%
BAT42W
BAT42W
BAT43W
BAT43W
V
F
V
F
V
F
V
F
C
D
t
rr
η
v
80
7
260
330
450
5
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA, I
R
= 10 mA,
I
rr
= 1 mA, R
L
= 100
Ω
R
L
= 15 kΩ, C
L
= 300 pF,
f = 45 MHz, V
RF
= 2 V
Pulse test t
p
< 300 µs
θ
< 2 %
www.vishay.com
2
Document Number 85661
Rev. 1.3, 30-Mar-06
BAT42W / BAT43W
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C unless otherwise specified
250
P
tot
- Power Dissipation (mW)
C
D
- Diode Capacitance (pF)
18
16
200
150
100
50
0
0
50
100
150
200
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
18442
T
A
- Ambient Temperature (°C)
18445
V
R
- Reverse
Voltage
(V)
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 4. Typical Capacitance vs. Reverse Applied Voltage
1000
100
125
°C
- 40
°C
25
°C
I
F
- Forward Current (mA)
10
1
0.1
0.01
0
18443
200
400
600
800
1000 1200
V
F
- Instantaneous Forward
Voltage
(mV)
Figure 2. Typical Reverse Characteristics
1000
I
R
- Reverse Leakage Current (µA)
125
°C
100
100
°C
75
°C
50
°C
25
°C
0.1
0.01
0
10
20
30
40
V
R
- Reverse
Voltage
(V)
50
10
1
18444
Figure 3. Typical Reverse Characteristics
Document Number 85661
Rev. 1.3, 30-Mar-06
www.vishay.com
3
BAT42W / BAT43W
Vishay Semiconductors
Package Dimensions in mm (Inches)
17432
www.vishay.com
4
Document Number 85661
Rev. 1.3, 30-Mar-06
BAT42W / BAT43W
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85661
Rev. 1.3, 30-Mar-06
www.vishay.com
5
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