Power Transistors
2SB933
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1256
10.0±0.3
8.5±0.2
6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
s
Features
q
q
q
q
1.5±0.1
1.5max.
1.1max.
Low collector to emitter saturation voltage V
CE(sat)
Satisfactory linearity of foward current transfer ratio h
FE
Large collector current I
C
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25˚C)
Ratings
–130
–80
–7
–10
–5
40
1.3
150
–55 to +150
Unit
V
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3
5.08±0.5
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
8.5±0.2
6.0±0.3
1.5
–0.4
A
2.0
3.0
–0.2
A
W
4.4±0.5
0.8±0.1
2.54±0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08±0.5
˚C
˚C
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
Conditions
V
CB
= –100V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –2A
I
C
= –4A, I
B
= – 0.2A
I
C
= –4A, I
B
= – 0.2A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
I
C
= –2A, I
B1
= – 0.2A, I
B2
= 0.2A
min
typ
max
–10
–50
4.4±0.5
Unit
µA
µA
V
–80
45
90
260
– 0.5
–1.5
30
0.13
1.5
0.13
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
V
V
MHz
µs
µs
µs
FE2
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
14.7±0.5
V
10.0±0.3
V
+0.4
+0
1
Power Transistors
P
C
— Ta
50
–8
(1) T
C
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
–7
I
B
=–120mA
T
C
=25˚C
2SB933
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=20
–30
–10
–3
–1
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
Collector current I
C
(A)
40
(1)
30
–100mA
–6
–5
–4
–3
–20mA
–2
–10mA
–1
–3mA
0
–80mA
–60mA
–40mA
–30mA
20
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
25˚C
T
C
=100˚C
–25˚C
10
(2)
(3)
0
0
20
40
60
80 100 120 140 160
0
–2
–4
–6
–8
–10
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
–100
10000
I
C
/I
B
=20
h
FE
— I
C
10000
V
CE
=–2V
3000
1000
300
100
30
10
3
f
T
— I
C
V
CE
=–10V
f=10MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
–10
–3
25˚C
–1
T
C
=–25˚C
100˚C
1000
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
T
C
=100˚C
–25˚C
25˚C
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
Transition frequency f
T
(MHz)
–3
–10
–30
3000
–1
–3
–10
–1
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
100
I
E
=0
f=1MHz
T
C
=25˚C
30
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(–I
B1
=I
B2
)
V
CC
=–50V
T
C
=25˚C
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
T
C
=25˚C
I
CP
t=0.5ms
–3
–1
300ms
I
C
10ms
1ms
Collector output capacitance C
ob
(pF)
3000
1000
300
100
30
10
3
1
– 0.1 – 0.3
Switching time t
on
,t
stg
,t
f
(
µs
)
10
3
1
0.3
0.1
0.03
0.01
Collector current I
C
(A)
–10
t
stg
t
on
t
f
– 0.3
– 0.1
– 0.03
– 0.01
–1
–1
–3
–10
–30
–100
0
– 0.8
–1.6
–2.4
–3.2
–3
–10
–30
–100 –300 –1000
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
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