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DTC114E Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
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NPN SILICON
BIAS RESISTOR
TRANSISTOR
PIN 3
COLLECTOR
(OUTPUT)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation
@ T
A
= 25°C (Note 1.)
Derate above 25°C
Symbol
V
CBO
V
CEO
I
C
P
D
350
2.81
mW
mW/°C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
PIN 2
BASE
(INPUT)
R1
R2
PIN 1
EMITTER
(GROUND)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to
Ambient (surface mounted)
Operating and Storage
Temperature Range
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
Symbol
R
θJA
T
J
, T
stg
T
L
260
10
Value
357
–55 to
+150
Unit
°C/W
°C
1
2
3
°C
Sec
CASE 29
TO–92 (TO–226)
STYLE 1
DEVICE MARKING AND RESISTOR VALUES
Device
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
Marking
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
Shipping
5000/Box
DTC1xxx
YWW
MARKING DIAGRAM
DTC1
xxx
Y
WW
= Specific Device Code
= (See Table)
= Year
= Work Week
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2001
402
January, 2001 – Rev. 2
Publication Order Number:
DTC114E/D
DTC114E Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector–Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter–Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
I
CBO
I
CEO
I
EBO
–
–
–
–
–
–
–
–
–
–
–
–
50
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
–
–
nAdc
nAdc
mAdc
Collector–Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector–Emitter Breakdown Voltage (Note 2.)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(Note 2.)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
–
60
100
140
140
350
350
5.0
15
30
200
–
–
–
–
–
–
–
–
–
–
–
0.25
Vdc
Collector–Emitter Saturation Voltage
(I
C
= 10 mA, I
E
= 0.3 mA) DTC144E/DTC114Y
(I
C
= 10 mA, I
B
= 0.3 mA)
DTD113E/DTC143E
(I
C
= 10 mA, I
B
= 5 mA) DTC123E
(I
C
= 10 mA, I
B
= 1 mA) DTC114T/DTC143T/
(I
C
= 10 mA, I
B
= 1 mA)
DTC143Z/DTC124E
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
DTC114E
DTC124E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
DTC144E
V
CE(sat)
V
OL
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
2. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
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403
DTC114E Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
DTC114E
DTC124E
DTC144E
DTC114Y
DTC123E
DTC143E
DTD113E
DTC114T
DTC143T
DTC143Z
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
DTC114E/DTC124E/DTC144E
DTC114Y
DTC114T/DTC143T
DTD113E/DTC123E/DTC143E
DTC143Z
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
0.8
0.17
–
0.8
0.055
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
1.0
0.21
–
1.0
0.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
1.2
0.25
–
1.2
0.185
kΩ
Symbol
V
OH
Min
4.9
Typ
–
Max
–
Unit
Vdc
(V
CC
= 5.0 V, V
B
= 0.05 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
Input Resistor
Resistor Ratio
R
1
/R
2
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404
DTC114E Series
TYPICAL ELECTRICAL CHARACTERISTICS
DTC114E
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
50
0
R
θJA
= 625°C/W
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
T
A
= -25°C
25°C
75°C
0.1
0.01
-50
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
0.001
0
20
40
60
I
C
, COLLECTOR CURRENT (mA)
80
Figure 1. Derating Curve
Figure 2. V
CE(sat)
versus I
C
1000
h FE, DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
Cob , CAPACITANCE (pF)
T
A
= 75°C
25°C
-25°C
100
4
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
3
2
1
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
75°C
IC , COLLECTOR CURRENT (mA)
10
1
0.1
0.01
25°C
T
A
= -25°C
10
V
O
= 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
T
A
= -25°C
25°C
75°C
1
V
O
= 5 V
0
1
2
5
6
7
3
4
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
0.001
Figure 5. V
CE(sat)
versus I
C
Figure 6. V
CE(sat)
versus I
C
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405
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