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DSC8505Q

Description
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, MT-2-A1-B, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size497KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DSC8505Q Overview

Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, MT-2-A1-B, 3 PIN

DSC8505Q Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)230
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC8505
Silicon NPN epitaxial planar type
For low frequency output amplification
DSC7505 in MT-2 through hole type package
Features
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
MT-2-A2-B
Name
Pin
1. Emitter
2. Collector
3. Base
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
40
20
7
3
5
1
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Packaging
Radial type : 2000 pcs / carton
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Marking Symbol: 5G
Note) Printed circuit board: Copper foil area of 1 cm
2
or more, and the board thickness
of 1.7 mm for the collector portion
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Transition frequency
*1
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CEO
V
EBO
I
CBO
h
FE1 *2
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 1 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
V
CB
= 10 V, I
E
= 0
V
CE
= 2 V, I
C
= 0.5 A
V
CE
= 2 V, I
C
= 2 A
I
C
= 3 A, I
B
= 0.1 A
V
CE
= 6 V, I
C
= 50 mA
V
CB
= 20 V, I
E
= 0, f = 1 MHz
200
50
230
150
1.0
Min
20
7
0.1
600
Typ
Max
Unit
V
V
mA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
Rank
h
FE1
Marking Symbol
Q
Q
230 to 380
5GQ
R
R
340 to 600
5GR
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: November 2011
Ver. AED
1

DSC8505Q Related Products

DSC8505Q DSC8505R DSC8505
Description Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, MT-2-A1-B, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, MT-2-A1-B, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, MT-2-A1-B, 3 PIN
Is it Rohs certified? conform to conform to conform to
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 5 A 5 A 5 A
Collector-emitter maximum voltage 20 V 20 V 20 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 230 340 150
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 1 W 1 W 1 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz
Base Number Matches 1 1 -
Maker - Panasonic Panasonic

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