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FP212E

Description
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 2-Element, NPN and PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size62KB,1 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

FP212E Overview

Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 2-Element, NPN and PNP, Silicon

FP212E Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage200 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)100
JESD-30 codeR-PSSO-G3
Number of components2
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN AND PNP
Maximum power consumption environment1 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.6 V
Base Number Matches1
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