Ordering number : ENN7554
TF202
N-channel Junction FET
TF202
Electret Condenser Microphone Applications
Features
•
Package Dimensions
unit : mm
2207A
[TF202]
Top View
1.4
0.3
•
•
•
•
Especially suited for use in electret condenser
microphone.
Ultrasmall package permitting TF202
applied sets to be made small and slim.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Side View
0.1
1.4
0.25
3
0.3
1
0.45
2
0.2
Bottom View
3
0.6
0.8
0.07
0.07
Side View
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
1 : Drain
2 : Source
3 : Gate
SANYO : SSFP
Unit
--20
10
1
100
150
--55 to +150
V
mA
mA
mW
°C
°C
2
1
Ratings
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)GDO
VGS(off)
IDSS
yfs
Ciss
Crss
IG=--100µA
VDS=5V, ID=1µA
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
Conditions
Ratings
min
--20
-
-0.2
140*
0.5
1.2
3.5
0.65
--0.6
--1.2
500*
typ
max
Unit
V
V
µA
mS
pF
pF
Continued on next page.
* : The TF202 is classified by IDSS as follows : (unit :
µA)
Rank
IDSS
E4
140 to 240
E5
210 to 350
E6
320 to 500
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82903 TS IM TA-100524 No.7554-1/4
TF202
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
min
typ
--3.0
--1.2
25
1000
1.0
--110
--3.5
--1.0
max
Unit
[Ta=25˚C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.]
Voltage Gain
Reduced Voltage Characteristics
Frequency Characteristics
Input Resistance
Output Resistance
Total Harmonic Distortion
Output Noise Voltage
GV
∆G
VV
∆Gvf
ZIN
ZO
THD
VNO
VIN=10mV, f=1kHz
VIN=10mV, f=1kHz, VCC=4.5→1.5V
f=1kHz to 110Hz
f=1kHz
f=1kHz
VIN=30mV, f=1kHz
VIN=0, A curve
dB
dB
dB
mΩ
Ω
%
dB
Test Circuit
Voltage gain
Frequency Characteristics
Distortion
Reduced Voltage Characteristics
1kΩ
VCC=4.5V
VCC=1.5V
15pF
33µF
+
VTVM V
OSC
THD
B A
Output Impedance
400
ID -- VDS
400
ID -- VDS
VGS=0
Drain Current, ID --
µA
300
Drain Current, ID --
µA
VGS=0
300
--0.1V
200
--0.1V
200
--0.2V
100
--0.2V
100
--0.3V
--0.5V
--0.4V
--0.3V
--0.5V
--0.4V
8
10
IT05908
600
0
0
1
2
3
4
5
IT05907
600
0
0
2
4
6
Drain-to-Source Voltage, VDS -- V
ID -- VGS
Drain-to-Source Voltage, VDS -- V
ID -- VGS
VDS=5V
VDS=5V
Drain Current, ID --
µA
400
400
ID
S
200
Ta
5
=7
°
C
200
0
20
--2
0
--1.0
--0.8
--0.6
--0.4
--0.2
0
IT05909
--1.0
--0.8
--0.6
--0.4
5
°
C
25
µ
A
°
C
0
--0.2
0
IT05910
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
No.7554-2/4
Drain Current, ID --
µA
40
S =50
30
0
µ
A
0
µ
A
0
µ
A
TF202
3
yfs
-- IDSS
VDS=5V
VGS=0
f=1kHz
--1.0
VGS(off) -- IDSS
VDS=5V
ID=1µA
Forward Transfer Admittance,
y
fs -- mS
Cutoff Voltage, VGS(off) -- V
2
7
5
1.0
3
7
5
7
100
2
3
5
7
2
Drain Current, IDSS --
µA
1000
IT05911
2
7
100
2
3
5
7
7
Ciss -- VDS
Drain Current, IDSS --
µA
1000
IT05912
Crss -- VDS
5
Reverse Transfer Capacitance, Crss -- pF
VGS=0
f=1MHz
VGS=0
f=1MHz
Input Capacitance, Ciss -- pF
1.0
7
3
5
2
7
1.0
2
3
5
7
10
2
3
3
7
1.0
2
3
5
7
10
2
3
Drain-to-Source Voltage, VDS -- V
2
IT05913
GV -- IDSS
Drain-to-Source Voltage, VDS -- V
Reduced Voltage Characteristics,
∆G
VV -- dB
2
∆G
VV -- IDSS
IT05914
0
Voltage Gain, GV -- dB
GV : VCC=4.5V
VIN=10mV
RL=1.0kΩ
f=1kHz
IDSS : VDS=5.0V
∆G
VV : VCC=4.5V¨1.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
0
--2
--4
--2
--6
--8
7
100
2
3
5
7
--4
7
100
2
3
5
7
Drain Current, IDSS --
µA
1000
IT05915
34
Drain Current, IDSS --
µA
1000
IT05916
3
THD -- IDSS
Zi -- IDSS
Zi : VCC=4.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
Total Harmonic Distortion, THD -- %
2
Input Impedance, Zi -- MΩ
THD : VCC=4.5V
VIN=30mV
f=1MHz
IDSS : VDS=5.0V
32
30
10
28
7
5
7
100
2
3
5
7
26
Drain Current, IDSS --
µA
1000
IT05917
7
100
2
3
5
7
Drain Current, IDSS --
µA
1000
IT05918
No.7554-3/4
TF202
1100
Zo -- IDSS
Output Noise Voltage, VNO -- dB
--110
VNO -- IDSS
VNO : VCC=4.5V
VIN=0, ACurve
RL=1.0kΩ
IDSS : VDS=5.0V
Output Impedance, Zo --
Ω
1000
Zo : VCC=4.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
--112
--114
900
--116
800
--118
700
7
100
2
3
5
7
--120
Drain Current, IDSS --
µA
1000
IT05919
120
7
100
2
3
5
7
3
THD -- VIN
Drain Current, IDSS --
µA
1000
IT05920
PD -- Ta
Total Harmonic Distortion, THD -- %
2
Allowable Power Dissipation, PD -- mW
THD : VCC=4.5V
f=1kHz
IDSS : VDS=5.0V
100
10
7
5
3
2
ID
µ
40
=1
SS
A
µ
A
250
µ
A
400
80
60
40
1.0
7
5
0
40
80
120
160
200
240
ITR02649
20
0
0
20
40
60
80
100
120
140
160
Input Voltage, VIN -- mV
Ambient Temperature, Ta --
°C
ITR02650
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2003. Specifications and information herein are subject
to change without notice.
PS No.7554-4/4
京公网安备 11010802033920号
EEWORLD
