2SC2629 datasheet, PDF - EEWORLD Datasheet

2SC2629: DescriptionNPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)　; CategoryDiscrete semiconductor The transistor; File Size123KB，3 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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2SC2629 Overview

NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)　

Parameter Name	Attribute value
package instruction	POST/STUD MOUNT, R-CQPM-F4
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	17 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-CQPM-F4
Number of components	1
Number of terminals	4
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	60 W
Maximum power dissipation(Abs)	3 W
Minimum power gain (Gp)	9.3 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	QUAD
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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