2SC2630 datasheet, PDF - EEWORLD Datasheet

2SC2630: DescriptionNPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)　; CategoryDiscrete semiconductor The transistor; File Size123KB，3 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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2SC2630 Overview

NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)　

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-CDFM-F6
Contacts	5
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	14 A
Collector-emitter maximum voltage	17 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F6
Number of components	1
Number of terminals	6
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	100 W
Maximum power dissipation(Abs)	5.5 W
Minimum power gain (Gp)	7 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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