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2SC2933

Description
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
CategoryDiscrete semiconductor    The transistor   
File Size114KB,3 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

2SC2933 Overview

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

2SC2933 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-CDFM-F6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionBASE
Maximum collector current (IC)4 A
Collector-emitter maximum voltage17 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F6
Number of components1
Number of terminals6
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment40 W
Maximum power dissipation(Abs)3 W
Minimum power gain (Gp)6.7 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

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