DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D119
BYD73 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 24
1996 Sep 18
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
handbook, 4 columns
BYD73 series
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass SOD81
package through Implotec™
(1)
technology. This package is
k
a
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BYD73A
BYD73B
BYD73C
BYD73D
BYD73E
BYD73F
BYD73G
V
R
continuous reverse voltage
BYD73A
BYD73B
BYD73C
BYD73D
BYD73E
BYD73F
BYD73G
I
F(AV)
average forward current
BYD73A to D
BYD73E to G
I
F(AV)
average forward current
BYD73A to D
BYD73E to G
T
tp
= 55
°C;
lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
T
amb
= 60
°C;
PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
−
−
−
−
−
−
−
−
−
50
100
150
200
250
300
400
1.75
1.70
V
V
V
V
V
V
V
A
A
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
−
−
50
100
150
200
250
300
400
V
V
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
1.00
0.95
A
A
1996 Sep 18
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
I
FRM
PARAMETER
repetitive peak forward current
BYD73A to D
BYD73E to G
I
FRM
repetitive peak forward current
BYD73A to D
BYD73E to G
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
T
amb
= 60
°C;
see Figs 8 and 9
−
−
−
CONDITIONS
T
tp
= 55
°C;
see Figs 6 and 7
−
−
BYD73 series
MIN.
MAX.
14
15
8.5
9.5
25
A
A
A
A
A
UNIT
E
RSM
T
stg
T
j
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
−
−65
−65
10
+175
+175
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYD73A to D
BYD73E to G
V
F
forward voltage
BYD73A to D
BYD73E to G
V
(BR)R
reverse avalanche breakdown
voltage
BYD73A
BYD73B
BYD73C
BYD73D
BYD73E
BYD73F
BYD73G
I
R
reverse current
V
R
= V
RRMmax
;
see Fig.14
V
R
= V
RRMmax
;
T
j
= 165
°C;
see Fig.14
t
rr
reverse recovery time
BYD73A to D
BYD73E to G
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.18
I
R
= 0.1 mA
55
110
165
220
275
330
440
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1
100
V
V
V
V
V
V
V
µA
µA
I
F
= 1 A;
see Figs 12 and 13
CONDITIONS
I
F
= 1 A; T
j
= T
j max
;
see Figs 12 and 13
MIN.
−
−
−
−
TYP.
−
−
−
−
MAX.
0.75
0.83
0.98
1.05
V
V
V
V
UNIT
−
−
−
−
25
50
ns
ns
1996 Sep 18
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
C
d
PARAMETER
diode capacitance
BYD73A to D
BYD73E to G
dI
R
--------
dt
maximum slope of reverse recovery
current
BYD73A to D
BYD73E to G
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
when switched from
I
F
= 1 A to V
R
≥
30 V
and dI
F
/dt =
−1
A/µs;
see Fig.17
CONDITIONS
f = 1 MHz; V
R
= 0 V;
see Fig.15
MIN.
−
−
BYD73 series
TYP.
50
40
MAX.
−
−
UNIT
pF
pF
−
−
−
−
4
5
A/µs
A/µs
VALUE
60
120
UNIT
K/W
K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.16.
For more information please refer to the
“General Part of associated Handbook”.
1996 Sep 18
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
GRAPHICAL DATA
handbook, halfpage
MGC535
BYD73 series
2.0
handbook, halfpage
MGC536
2.0
IF(AV)
(A)
1.6
lead length 10 mm
IF(AV)
(A)
1.6
lead length 10 mm
1.2
1.2
0.8
0.8
0.4
0.4
0
0
BYD73A to D
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
Ttp ( C)
o
0
200
0
BYD73E to G
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
Ttp (
o
C)
200
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MGC538
MGC537
handbook, halfpage
1.6
handbook, halfpage
1.6
IF(AV)
(A)
1.2
IF(AV)
(A)
1.2
0.8
0.8
0.4
0.4
0
0
100
Tamb ( C)
o
0
200
0
100
Tamb (
o
C)
200
BYD73A to D
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
BYD73E to G
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1996 Sep 18
5
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