Philips Semiconductors
Preliminary specification
Damper diode
fast, high-voltage
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
BY359F-1500, BY359F-1500S
SYMBOL
QUICK REFERENCE DATA
V
R
= 1500 V
V
F
≤
1.8 V / 2 V
I
F(RMS)
= 15.7 A
I
FSM
≤
60 A
t
rr
≤
600 ns / 350 ns
k
1
a
2
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diode featuring low forward
voltage drop, fast reverse recovery
and soft recovery characteristic.
The device is intended for use in TV
receivers and PC monitors.
The BY359F series is supplied in
the conventional leaded SOD100
package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
isolated
SOD100
case
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RSM
V
RRM
V
RWM
I
F(peak)
I
F(RMS)
I
FRM
I
FSM
PARAMETER
Peak non-repetitive reverse
voltage
Peak repetitive reverse voltage
Crest working reverse voltage
Peak forward current
RMS forward current
Peak repetitive forward current
Peak non-repetitive forward
current
Storage temperature
Operating junction temperature
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-40
-
MAX.
1500
1500
1300
10
7
15.7
60
60
66
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
16-32kHz TV
31-70kHz monitor
BY359F-1500
BY359F-1500S
T
stg
T
j
sinusoidal; a = 1.57
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 150 ˚C prior to surge;
with reapplied V
RWM(max)
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
5.9
-
UNIT
K/W
K/W
K/W
September 1998
1
Rev 1.300
Philips Semiconductors
Preliminary specification
Damper diode
fast, high-voltage
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
BY359F-1500, BY359F-1500S
BY359F-1500
SYMBOL
V
F
I
R
PARAMETER
Forward voltage
Reverse current
CONDITIONS
I
F
= 20 A
I
F
= 10 A; T
j
= 150˚C
V
R
= 1300 V
V
R
= 1300 V;
T
j
= 100 ˚C
TYP.
1.3
1.00
10
50
MAX.
1.8
1.5
100
300
BY359F-1500S
TYP.
1.5
1.25
10
100
MAX.
2.0
1.75
100
600
UNIT
V
V
µA
µA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
BY359F-1500
SYMBOL
t
rr
Q
s
V
fr
PARAMETER
Reverse recovery time
Reverse recovery charge
Peak forward recovery voltage
CONDITIONS
I
F
= 2 A; V
R
≥
30 V;
-dI
F
/dt = 20 A/µs
I
F
= 10 A;
dI
F
/dt = 30 A/µs
TYP.
0.47
1.6
11.0
MAX.
0.60
2.0
-
BY359F-1500S
TYP.
0.28
0.70
17.0
MAX.
0.35
0.95
-
UNIT
µs
µC
V
I
dI
F
dt
I
F
F
trr
time
time
VF
Qs
25%
100%
V
VF
time
I
fr
R
I
rrm
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
September 1998
2
Rev 1.300
Philips Semiconductors
Preliminary specification
Damper diode
fast, high-voltage
BY359F-1500, BY359F-1500S
80
70
IFS(RMS) / A
BY359
IF / A
30
Tj=150C
BY359
IFSM
60
50
40
30
10
20
Tj=25C
typ
20
10
0
1ms
10ms
0.1s
tp / s
1s
10s
0
0
1.0
VF / V
2.0
max
Fig.3. Maximum non-repetitive rms forward current.
I
F
= f(t
p
); sinusoidal current waveform; T
j
= 150˚C prior
to surge with reapplied V
RWM
.
Fig.5. BY359F-1500 forward characteristic I
F
= f(V
F
);
parameter T
j
IF / A
BY359S
10
Transient thermal impedance, Zth j-hs (K/W)
30
Tj=150C
Tj=25C
1
20
0.1
10
typ
0.01
P
D
t
p
D=
t
p
T
t
0
0
1.0
VF / V
max
0.001
1us
T
2.0
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY359F
10s
Fig.4. Transient thermal impedance Z
th
= f(t
p
)
Fig.6. BY359F-1500S forward characteristic
I
F
= f(V
F
); parameter T
j
September 1998
3
Rev 1.300
Philips Semiconductors
Preliminary specification
Damper diode
fast, high-voltage
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BY359F-1500, BY359F-1500S
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
k
0.4
M
a
0.9
0.7
0.55 max
1.3
5.08
top view
Fig.7. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
4
Rev 1.300
Philips Semiconductors
Preliminary specification
Damper diode
fast, high-voltage
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
BY359F-1500, BY359F-1500S
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
5
Rev 1.300
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