Transistor
2SC3187
Silicon NPN triple diffusion planer type
For small TV video output
Unit: mm
5.0±0.2
4.0±0.2
q
q
High collector to emitter voltage V
CEO
.
Small collector output capacitance C
ob
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
300
300
7
200
100
750
150
–55 ~ +150
Unit
V
V
1 2 3
0.45
–0.1
1.27
+0.2
13.5±0.5
5.1±0.2
s
Features
0.45
–0.1
1.27
+0.2
2.3±0.2
V
mA
mA
mW
˚C
˚C
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE
V
BE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 10µA, I
E
= 0
I
C
= 100µA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 50V, I
C
= 5mA
V
CE
= 10V, I
C
= 30mA
I
C
= 30mA, I
B
= 3mA
V
CB
= 30V, I
E
= –20mA, f = 200MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
70
140
1.9
min
300
300
7
50
250
1.2
1.5
V
V
MHz
pF
typ
max
Unit
V
V
V
1
Transistor
P
C
— Ta
1.0
120
Ta=25˚C
I
B
=2.0mA
1.6mA
1.2mA
1.0mA
0.8mA
0.6mA
60
0.4mA
40
0.2mA
20
200
2SC3187
I
C
— V
CE
240
V
CE
=5V
25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(mA)
Collector current I
C
(mA)
0.8
100
Ta=75˚C
160
–25˚C
80
0.6
120
0.4
80
0.2
40
0
0
20
40
60
80 100 120 140 160
0
0
10
20
30
40
50
60
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
0.1
0.03
0.01
1
3
10
30
100
300
1000
I
C
/I
B
=10
240
h
FE
— I
C
240
V
CE
=50V
Ta=75˚C
200
25˚C
160
–25˚C
120
f
T
— I
E
V
CB
=30V
Ta=25˚C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
100
300
1000
200
160
Ta=75˚C
25˚C
–25˚C
120
80
80
40
40
0
1
3
10
30
0
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
10
1000
I
E
=0
f=1MHz
Ta=25˚C
300
Area of safe operation (ASO)
Ta=25˚C
Single pulse
I
CP
t=2.0ms
I
C
t=1s
Collector output capacitance C
ob
(pF)
Collector current I
C
(mA)
1
3
10
30
100
300
1000
8
100
30
10
3
1
0.3
6
4
2
0
0.1
1
3
10
30
100
300
1000
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
2
stm32/stm8
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