BFR360F
Low Noise Silicon Bipolar RF Transistor
•
Low noise amplifier for low current applications
•
Collector design supports 5 V supply voltage
•
For oscillators up to 3.5 GHz
•
Low noise figure 1.0 dB at 1.8 GHz
•
Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
•
Qualification report according to AEC-Q101 available
3
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFR360F
Parameter
Marking
FBs
Pin Configuration
1=B
2=E
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
Symbol
R
thJS
3=C
Value
Package
TSFP-3
Unit
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
98°C
6
15
15
2
35
4
210
150
-55 ... 150
Value
V
mA
mW
°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Unit
Junction - soldering point
2)
1
T
S
is
2
For
250
K/W
measured on the collector lead at the soldering point to the pcb
the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2013-11-06
BFR360F
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 4 V,
V
BE
= 0
V
CE
= 10 V,
V
BE
= 0,
T
A
= 85°C
Verified by random sampling
Collector-base cutoff current
V
CB
= 4 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 15 mA,
V
CE
= 3 V, pulse measured
h
FE
90
120
160
-
I
EBO
-
1
500
I
CBO
-
1
30
I
CES
-
-
1
2
30
50
nA
V
(BR)CEO
6
9
-
V
Symbol
min.
Values
typ.
max.
Unit
2
2013-11-06
BFR360F
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 15 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 5 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 3 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
f
= 3 GHz
Transducer gain
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
f
= 3 GHz
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 15 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
1dB compression point at output
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
1/2
ma
= |
S
21e
/
S
12e
| (k-(k²-1) )
2
IP3 value depends on termination
Unit
max.
-
0.5
GHz
pF
typ.
14
0.32
f
T
C
cb
11
-
C
ce
-
0.2
-
C
eb
-
0.4
-
NF
min
-
1
-
dB
G
ma
-
-
|S
21e
|
2
-
-
IP3
-
13
9
24
-
-
-
dBm
15.5
11
-
-
dB
P
-1dB
-
9
-
of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
3
2013-11-06
BFR360F
Total power dissipation
P
tot
=
ƒ
(T
S
)
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
f
= 1MHz
240
mW
0.8
pF
180
0.6
150
C
cb
90 105 120
°C
P
tot
0.5
120
0.4
90
0.3
60
0.2
30
0.1
0
0
15
30
45
60
75
150
0
0
2
4
6
8
10
12
V
16
T
S
V
CB
Third order Intercept Point
IP
3
=
ƒ
(I
C
)
(Output, Z
S
=Z
L
=50
Ω
)
V
CE
= parameter,
f
= 1.8GHz
30
dBm
Transition frequency
f
T
=
ƒ
(I
C
)
f
= 1GHz
V
CE
= parameter
17
GHz
14
20
5V
12
3V
IP
3
f
T
15
10
8
2V
10
5
6V
4V
3V
2V
1V
1V
6
4
2
0
0
0.7V
0
-5
0
5
10
15
20
25
30
mA
40
5
10
15
20
25
30
mA
40
I
C
I
C
4
2013-11-06
BFR360F
Power gain
G
ma
,
G
ms
=
ƒ
(I
C
)
f
= 0.9GHz
V
CE
= parameter
24
dB
5V
Power gain
G
ma
,
G
ms
=
ƒ
(I
C
)
f
= 1.8GHz
V
CE
= parameter
18
22
21
20
3V
2V
dB
5V
3V
G
19
18
17
16
15
14
13
12
0
5
10
15
20
25
30
mA
0.7V
1V
14
G
2V
12
1V
10
0.7V
40
8
0
5
10
15
20
25
30
mA
40
I
C
I
C
Power Gain
G
ma
,
G
ms
=
ƒ
(f)
V
CE
= parameter
49
dB
Ic = 15mA
Insertion Power Gain
|S
21
|² =
ƒ
(f)
V
CE
= parameter
36
dB
Ic = 15mA
39
34
28
24
29
24
19
14
9
4
0
20
16
12
5V
2V
1V
0.7V
G
5V
2V
1V
0.7V
G
8
4
0
0
3.5
GHz
0.5
1
1.5
2
2.5
3
4.5
0.5
1
1.5
2
2.5
3
3.5
GHz
4.5
f
f
5
2013-11-06
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