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BFS481-E6433

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size122KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BFS481-E6433 Overview

Transistor

BFS481-E6433 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
Is SamacsysN
Maximum collector current (IC)0.02 A
Minimum DC current gain (hFE)50
Maximum operating temperature150 °C
Polarity/channel typeNPN
surface mountYES
Nominal transition frequency (fT)6000 MHz
Base Number Matches1
BFS481
NPN Silicon RF Transistor*
For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
f
T
= 8 GHz,
F
= 0.9 dB at 900 MHz
Two (galvanic) internal isolated
Transistors in one package
For orientation in reel see
package information below
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
* Short term description
4
5
6
1
2
3
C1
6
E2
5
B2
4
TR2
TR1
1
B1
2
E1
3
C2
EHA07196
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFS481
1
Pb-containing
Marking
RFs
1=B
Pin Configuration
2=E
3=C
4=B
5=E
6=C
Package
SOT363
package may be available upon special request
2007-04-26
1

BFS481-E6433 Related Products

BFS481-E6433 BFS481-H6327
Description Transistor Transistor
Is it Rohs certified? conform to conform to
Reach Compliance Code compliant compliant
Is Samacsys N N
Maximum collector current (IC) 0.02 A 0.02 A
Minimum DC current gain (hFE) 50 50
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
surface mount YES YES
Nominal transition frequency (fT) 6000 MHz 6000 MHz
Base Number Matches 1 1
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