MCR72-3, MCR72-6,
MCR72-8
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for industrial and consumer applications such as
temperature, light and speed control; process and remote controls;
warning systems; capacitive discharge circuits and MPU interface.
Features
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•
Center Gate Geometry for Uniform Current Density
•
All Diffused and Glass-Passivated Junctions for Parameter
Uniformity and Stability
•
Small, Rugged Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•
Low Trigger Currents, 200
mA
Maximum for Direct Driving from
Integrated Circuits
•
These are Pb−Free Devices*
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
=
*40
to 110°C, Sine Wave,
50 Hz to 60 Hz)
MCR72−3
MCR72−6
MCR72−8
On-State RMS Current
(180° Conduction Angles; T
C
= 83°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, 60 Hz, T
J
= 110°C)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Voltage
(t
≤
10
ms,
T
C
= 83°C)
Forward Peak Gate Current
(t
≤
10
ms,
T
C
= 83°C)
Forward Peak Gate Power
(t
≤
10
ms,
T
C
= 83°C)
Average Gate Power (t = 8.3 ms, T
C
= 83°C)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
Symbol
V
DRM,
V
RRM
100
400
600
I
T(RMS)
I
TSM
I
2
t
V
GM
I
GM
P
GM
P
G(AV)
T
J
T
stg
−
8.0
100
40
"5.0
1.0
5.0
0.75
−40 to +110
−40 to +150
8.0
A
A
A
2
s
V
A
W
W
°C
°C
in. lb.
1
2
3
4
Value
Unit
V
SCRs
8 AMPERES RMS
100 thru 600 VOLTS
G
A
K
1
2
TO−220AB
CASE 221A−07
STYLE 3
3
TO−220AB
CASE 221A−09
STYLE 3
1
2
3
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING AND ORDERING INFORMATION
See detailed marking, ordering, and shipping information in
the package dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 5
Publication Order Number:
MCR72/D
MCR72−3, MCR72−6, MCR72−8
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Secs
Symbol
R
qJC
R
qJA
T
L
Max
2.2
60
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 2)
(V
AK
= Rated V
DRM
or V
RRM
; R
GK
= 1 kW)
High Logic Level Supply Current from V
CC
ON CHARACTERISTICS
Peak Forward On-State Voltage
(I
TM
= 16 A Peak, Pulse Width
p
1 ms, Duty Cycle
p
2%)
Gate Trigger Current (Continuous dc) (Note 3)
(V
D
= 12 V, R
L
= 100
W)
Gate Trigger Voltage (Continuous dc) (Note 3)
(V
D
= 12 V, R
L
= 100
W)
Gate Non−Trigger Voltage
(V
D
= 12 Vdc, R
L
= 100
W,
T
J
= 110°C)
Holding Current
(V
D
= 12 V, Initiating Current = 200 mA, R
GK
= 1 kW)
Gate Controlled Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 16 A, I
G
= 2 mA)
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(V
D
= Rated V
DRM
, R
GK
= 1 kW, T
J
= 110°C, Exponential Waveform)
dv/dt
−
10
−
V/ms
V
TM
I
GT
V
GT
V
GD
I
H
t
gt
−
−
−
0.1
−
−
1.7
30
0.5
−
−
1.0
2.0
200
1.5
−
6.0
−
V
mA
V
V
mA
ms
I
DRM
, I
RRM
T
J
= 25°C
T
J
= 110°C
I
CCH
−
−
4
−
−
4
10
500
mA
mA
mA
mA
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Ratings apply for negative gate voltage or R
GK
= 1 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the
voltage applied exceeds the rated blocking voltage.
3. R
GK
current not included in measurement.
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2
MCR72−3, MCR72−6, MCR72−8
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
T C , MAXIMUM CASE TEMPERATURE (
°
C)
110
PAV , AVERAGE POWER DISSIPATION (WATTS)
16
dc
12
α
α
= Conduction Angle
8.0
α
= 30° 60°
4.0
90°
180°
100
α
90
α
= 30°
60°
90°
80
180°
dc
70
α
= Conduction Angle
0
2.0
4.0
6.0
8.0
0
0
2.0
4.0
6.0
8.0
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMP)
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMP)
Figure 1. Average Current Derating
Figure 2. On−State Power Dissipation
3.0
VGT , GATE TRIGGER VOLTAGE (VOLTS)
NORMALIZED GATE CURRENT
2.0
V
D
= 12 Vdc
0.7
0.6
0.5
0.4
0.3
0.2
0.1
-60
-40
-20
0
20
40
60
80
100
T
J
, JUNCTION TEMPERATURE (°C)
120
V
D
= 12 Vdc
1.0
0.5
0.3
-40
-20
0
20
40
60
80
90 100
T
J
, JUNCTION TEMPERATURE (°C)
120
140
Figure 3. Normalized Gate Current
Figure 4. Gate Voltage
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MCR72−3, MCR72−6, MCR72−8
MARKING DIAGRAMS
TO−220AB
CASE 221A−07
TO−220AB
CASE 221A−09
AY WW
MCR72−xG
AKA
AY WW
MCR72−6TG
AKA
A
Y
WW
MCR72−x
G
AKA
Assembly Location
Year
Work Week
Device Code
x = 3, 6, 8, or 8T
= Pb−Free Package
= Diode Polarity
=
=
=
=
A
Y
WW
MCR72−6T
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
MCR72−3G
MCR72−6G
MCR72−6TG
MCR72−8G
MCR72−8TG
Package
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
Shipping
500 Units / Box
500 Units / Box
50 Units / Rail
500 Units / Box
50 Units / Rail
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MCR72−3, MCR72−6, MCR72−8
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE O
−T−
B
F
C
S
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
CATHODE
ANODE
GATE
ANODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
T
4
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
J
R
STYLE 3:
PIN 1.
2.
3.
4.
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5
Microcontroller MCU
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