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BG3430R-E6327

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size539KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BG3430R-E6327 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BG3430R-E6327 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Humidity sensitivity level1
Operating modeDUAL GATE, ENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
BG3430R
DUAL N-Channel MOSFET Tetrode
Designed for input stages of
2 band tuners
Two AGC amplifiers in one single package
with on-chip internal switch
Only one switching line to control both FETs
Integrated gate protection diodes
High gain, low noise figure, high AGC-range
Good cross modulation at gain reduction
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Detailed functional diagram on page 4
4
5
6
1
2
3
BG3430R
$
#
"
*
)

!
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BG3430R
Package
SOT363
1=G1* 2=S
Pin Configuration
3=D*
4=D**
5=G2
Marking
6=G1** KNs
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
1
2009-10-01

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