DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC3355
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise
amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.
PACKAGE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 8.0 dB TYP. @V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., G
a
= 9.0 dB TYP. @V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
• High Power Gain
MAG = 11 dB TYP. @V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
0.5
(0.02)
1.77 MAX.
(0.069 MAX.)
5.5 MAX.
(0.216 MAX.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
65
20
12
3.0
100
600
150
to +150
V
V
V
mA
mW
C
C
1.27
(0.05)
2.54
(0.1)
1
2
3
1. Base
2. Emitter
3. Collector
EIAJ : SC-43B
JEDEC : TO-92
IEC
: PA33
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Insertion Power Gain
Noise Figure
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
ob
50
120
6.5
0.65
9.5
1.1
1.8
3.0
1.0
MIN.
TYP.
MAX.
1.0
1.0
300
GHz
pF
dB
dB
dB
UNIT
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1.0 V, I
C
= 0
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
A
A
S
21e
2
NF
NF
h
FE
Classification
Class
Marking
h
FE
K
K
50 to 300
Document No. P10355EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
©
4.2 MAX.
(0.165 MAX.)
14 MIN.
(0.551 MIN.)
1985
2SC3355
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
f = 1.0 MHz
P
T
-Total Power Dissipation-mW
heat sink
19
With heat sink
10
1000
C
re
-Feed-back Capacitance-pF
3.8
1
500
Free air
7.8
0.5
0
50
100
150
0.3
0
0.5 1
2
5
10
V
CB
-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
15
V
CE
= 10 V
f = 1.0 GHz
20
30
T
A
-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
V
CE
= 10 V
|S
21e
|
2
-Insertion Gain-dB
h
FE
-DC Current Gain
100
10
50
5
20
10
0.5
1
5
10
50
0
0.5
1
5
10
50 70
I
C
-Collector Current-mA
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
10
I
C
-Collector Current-mA
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
max
f
T
-Gain Bandwidth Product-GHz
5.0
20
G
max
-Maximum Gain-dB
|S
21e
|
2
-Insertion Gain-dB
3.0
2.0
1.0
0.5
0.3
0.2
V
CE
= 10 V
0.1
0
0.5 10
5.0
10
30
I
C
-Collector Current-mA
|S
21e
|
2
10
V
CE
= 10 V
I
C
= 20 mA
0
0.1
0.2
0.4
0.6 0.8 10
2
f-Frequency-GHz
2
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