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KA4L3N-AZ

Description
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, SC-75, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size337KB,22 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance  
Download Datasheet Parametric View All

KA4L3N-AZ Overview

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, SC-75, 3 PIN

KA4L3N-AZ Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-75
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresBUILT IN BIAS RESISTOR RATIO IS 2.127
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G3
JESD-609 codee6
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
SILICON TRANSISTOR
KA4xxx
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
FEATURES
Compact package
Resistors built-in type
Complementary to KN4xxx
1.6 ± 0.1
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
ORDERING INFORMATION
PART NUMBER
KA4xxx
PACKAGE
SC-75 (USM)
0.8 ± 0.1
3
0 to 0.1
2
1
0.2
0.5
+0.1
–0
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Junction Temperature
Storage Temperature
Note 1.
PART NUMBER
V
EBO
(V)
KA4A4M
KA4F4M
KA4L4M
KA4L3M
KA4L3N
KA4L3Z
KA4A3Q
KA4A4P
KA4F4N
10
10
10
10
5
5
5
5
5
A4
B4
C4
D4
E4
F4
G4
H4
X4
MARK
R
1
(kΩ)
10.0
22.0
47.0
4.7
4.7
4.7
1.0
10.0
22.0
10.0
47.0
47.0
R
2
(kΩ)
10.0
22.0
47.0
4.7
10.0
KA4L4L
KA4A4Z
KA4F4Z
KA4L4Z
KA4F3M
KA4F3P
KA4F3R
KA4A4L
KA4L4K
PART NUMBER
Note2
0.5
1.0
0.6
0.75 ± 0.05
V
CBO
V
CEO
V
EBO
I
C
I
C(pulse)
P
T
T
j
T
stg
60
50
Note1
V
V
V
A
A
W
°C
°C
2
R
1
R
2
1.6 ± 0.1
EQUIVALENT CIRCUIT
3
PIN CONNECTION
1: Emitter
2: Base
3: Collector
0.1
0.2
0.2
150
–55 to +150
Total Power Dissipation
Note3
1
MARK
R
1
(kΩ)
K4
Y4
Z4
N4
P4
Q4
R4
S4
T4
47.0
10.0
22.0
47.0
2.2
2.2
2.2
10.0
47.0
2.2
10.0
47.0
4.7
10.0
R
2
(kΩ)
22.0
V
EBO
(V)
15
5
5
5
10
5
5
15
25
<R>
Note 2.
PW
10 ms, Duty Cycle
50%
2
Note 3.
Mounted on ceramic substrate of 3.0 cm x 0.64 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16495EJ5V0DS00 (5th edition)
Date Published April 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

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