MCP606/7/8/9
2.5V to 5.5V Micropower CMOS Op Amps
Features
•
•
•
•
•
•
•
•
•
•
Low Input Offset Voltage: 250 µV (max.)
Rail-to-Rail Output
Low Input Bias Current: 80 pA (max. at 85°C)
Low Quiescent Current: 25 µA (max.)
Power Supply Voltage: 2.5V to 5.5V
Unity-Gain Stable
Chip Select (CS) Capability:
MCP608
Industrial Temperature Range: -40°C to +85°C
No Phase Reversal
Available in Single, Dual and Quad Packages
Description
The MCP606/7/8/9 family of operational amplifiers (op
amps) from Microchip Technology Inc. are unity-gain
stable with low offset voltage (250 µV, max.).
Performance characteristics include rail-to-rail output
swing capability and low input bias current (80 pA at
+85°C, max.). These features make this family of op
amps well suited for single-supply, precision, high-
impedance, battery-powered applications.
The single MCP606 is available in standard 8-lead
PDIP, SOIC and TSSOP packages, as well as in a
SOT-23-5 package. The single MCP608 with Chip
Select (CS) is offered in standard 8-lead PDIP, SOIC
and TSSOP packages. The dual MCP607 is offered in
standard 8-lead PDIP, SOIC and TSSOP packages.
Finally, the quad MCP609 is offered in standard
14-lead PDIP, SOIC and TSSOP packages. All devices
are fully specified from -40°C to +85°C, with power
supplies from 2.5V to 5.5V.
Typical Applications
• Battery Power Instruments
• High-Impedance Applications
- Photodiode Amplifier
- pH Probe Buffer Amplifier
- Infrared Detectors
- Precision Integrators
- Charge Amplifier for Piezoelectric
Transducers
• Strain Gauges
• Medical Instruments
• Test Equipment
Package Types
MCP606
PDIP, SOIC,TSSOP
NC
V
IN
–
V
IN
+
V
SS
1
2
3
4
8
7
6
5
NC
V
DD
V
OUT
NC
MCP606
SOT-23-5
V
OUT
1
V
SS
2
V
IN
+ 3
5 V
DD
4 V
IN
–
Available Tools
• SPICE Macro Models (at www.microchip.com)
• FilterLab
®
Software (at www.microchip.com)
MCP607
PDIP, SOIC,TSSOP
V
OUTA
V
INA
–
V
INA
+
V
SS
1
2
3
4
8
7
6
5
MCP608
PDIP, SOIC,TSSOP
8
7
6
5
CS
V
DD
V
OUT
NC
Typical Application
I
L
R
G
5 kΩ
2.5V
to
5.5V
R
SEN
10Ω
MCP606
R
F
50 kΩ
To Load
(V
LP
)
V
OUT
To Load
(V
LM
)
NC 1
V
DD
V
OUTB
V
IN
– 2
V
INB
– V
IN
+ 3
V
INB
+ V
SS
4
MCP609
PDIP, SOIC,TSSOP
V
OUTA
V
INA
–
V
INA
+
V
DD
V
INB
+
V
INB
–
V
OUTB
1
2
3
4
5
6
7
14 V
OUTD
13 V
IND
–
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
–
8 V
OUTC
Low-Side Battery Current Sensor
©
2005 Microchip Technology Inc.
DS11177D-page 1
MCP606/7/8/9
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Absolute Maximum Ratings †
V
DD
– V
SS
.......................................................................7.0V
All Inputs and Outputs ................... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ..................................continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±30 mA
Storage temperature ....................................-65°C to +150°C
Maximum Junction Temperature (T
J
) ......................... +150°C
ESD protection on all pins (HBM;MM) ...................2 kV; 200V
DC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +2.5V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2 and R
L
= 100 kΩ to V
DD
/2.
Parameters
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current
At Temperature
Input Offset Bias Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Range
Common Mode Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain
(Large-signal)
DC Open-Loop Gain
(Large-signal)
Output
Maximum Output Voltage Swing
V
OL
, V
OH
V
OL
, V
OH
Linear Output Voltage Range
V
OUT
V
OUT
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
V
DD
I
Q
2.5
—
—
18.7
5.5
25
V
µA
I
O
= 0
I
SC
I
SC
V
SS
+ 15
V
SS
+ 45
V
SS
+ 50
V
SS
+ 100
—
—
—
—
—
—
7
17
V
DD
– 20
V
DD
– 60
V
DD
– 50
V
DD
– 100
—
—
mV
mV
mV
mV
mA
mA
R
L
= 25 kΩ to V
DD
/2,
0.5V output overdrive
R
L
= 5 kΩ to V
DD
/2,
0.5V output overdrive
R
L
= 25 kΩ to V
DD
/2,
A
OL
≥
105 dB
R
L
= 5 kΩ to V
DD
/2,
A
OL
≥
100 dB
V
DD
= 2.5V
V
DD
= 5.5V
A
OL
A
OL
105
100
121
118
—
—
dB
dB
R
L
= 25 kΩ to V
DD
/2,
V
OUT
= 50 mV to V
DD
– 50 mV
R
L
= 5 kΩ to V
DD
/2,
V
OUT
= 0.1V to V
DD
– 0.1V
V
CMR
CMRR
V
SS
– 0.3
75
91
V
DD
– 1.1
—
V
dB
CMRR
≥
75 dB
V
DD
= 5V,
V
CM
= -0.3V to 3.9V
I
B
I
B
I
OS
Z
CM
Z
DIFF
—
—
—
—
—
1
—
1
10
13
||6
10
13
||6
—
80
—
—
—
pA
pA
pA
Ω||pF
Ω||pF
T
A
= +85°C
V
OS
ΔV
OS
/ΔT
A
PSRR
-250
—
80
—
±1.8
93
+250
—
—
µV
µV/°C T
A
= -40°C to +85°C
dB
Sym
Min
Typ
Max
Units
Conditions
DS11177D-page 2
©
2005 Microchip Technology Inc.
MCP606/7/8/9
AC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +2.5V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
2.8
38
3
—
—
—
µV
P-P
nV/√Hz
fA/√Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
155
62
0.08
—
—
—
kHz
°
V/µs
G = +1
G=1
Sym
Min
Typ
Max
Units
Conditions
MCP608 CHIP SELECT (CS) CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +2.5V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
Amplifier Output Leakage, CS High
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output Hi-Z
CS Hysteresis
t
ON
t
OFF
V
HYST
—
—
—
9
0.1
0.6
100
—
—
µs
µs
V
CS = 0.2V
DD
to V
OUT
= 0.9(V
DD
/2),
G = +1 V/V, R
L
= 1 kΩ to V
SS
CS = 0.8V
DD
to V
OUT
= 0.1(V
DD
/2),
G = +1 V/V, R
L
= 1 kΩ to V
SS
V
DD
= 5.0V
V
IH
I
CSH
I
SS
I
O(LEAK)
0.8 V
DD
—
-2
—
—
0.01
-0.05
10
V
DD
0.1
—
—
V
µA
µA
nA
CS = V
DD
CS = V
DD
CS = V
DD
V
IL
I
CSL
V
SS
-0.1
—
0.01
0.2 V
DD
—
V
µA
CS = 0.2V
DD
Sym
Min
Typ
Max
Units
Conditions
CS
t
ON
V
OUT
Hi-Z
V
IL
V
IH
t
OFF
Hi-Z
-50 nA (typ.)
-50 nA (typ.)
I
SS
-50 nA (typ.) -18.7 µA (typ.)
I
CS
-50 nA (typ.)
FIGURE 1-1:
Timing Diagram for the CS
Pin on the MCP608.
©
2005 Microchip Technology Inc.
DS11177D-page 3
MCP606/7/8/9
TEMPERATURE CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +2.5V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-TSSOP
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note 1:
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
—
—
256
85
163
124
70
120
100
—
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
-40
-40
-65
—
—
—
+85
+125
+150
°C
°C
°C
Note 1
Sym
Min
Typ
Max
Units
Conditions
The MCP606/7/8/9 operate over this extended temperature range, but with reduced performance. In any case, the
Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
DS11177D-page 4
©
2005 Microchip Technology Inc.
MCP606/7/8/9
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, V
DD
= +2.5V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
16%
14%
12%
10%
8%
6%
4%
2%
0%
-50
0
50
100
150
200
-250
-200
-150
-100
250
1200 Samples
V
DD
= 5.5V
Percentage of Occurances
25%
20%
15%
10%
5%
0%
0
1
2
3
4
5
6
7
8
9
9
Input Offset Voltage Drift Magnitude (µV/°C)
10
100
10
Percentage of Occurances
1200 Samples
V
DD
= 5.5V
Input Offset Voltage (µV)
FIGURE 2-1:
V
DD
= 5.5V.
Percentage of Occurances
16%
14%
12%
10%
8%
6%
4%
2%
0%
-250
-200
-150
Input Offset Voltage at
FIGURE 2-4:
Input Offset Voltage Drift
Magnitude at V
DD
= 5.5V.
25%
Percentage of Occurances
20%
15%
10%
5%
0%
0
1
2
3
4
5
6
7
50
Input Offset Voltage Drift Magnitude (µV/°C)
8
75
1200 Samples
V
DD
= 2.5V
1200 Samples
V
DD
= 2.5V
-100
-50
0
50
100
150
200
Input Offset Voltage (µV)
FIGURE 2-2:
V
DD
= 2.5V.
22
20
18
16
14
12
10
8
6
4
2
0
Input Offset Voltage at
250
FIGURE 2-5:
Input Offset Voltage Drift
Magnitude at V
DD
= 2.5V.
24
Quiescent Current
per Amplifier (µA)
22
20
18
16
14
12
V
DD
= 2.5V
V
DD
= 5.5V
Quiescent Current
per Amplifier (µA)
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
-50
-25
0
25
Ambient Temperature (°C)
FIGURE 2-3:
Quiescent Current vs.
Power Supply Voltage.
FIGURE 2-6:
Quiescent Current vs.
Ambient Temperature.
©
2005 Microchip Technology Inc.
DS11177D-page 5
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