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OM6240SD

Description
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size288KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

OM6240SD Overview

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

OM6240SD Parametric

Parameter NameAttribute value
package instructionFLATPACK, R-MDFP-F6
Reach Compliance Codeunknown
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.55 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-MDFP-F6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLATPACK
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
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