3Z30 datasheet, PDF - EEWORLD Datasheet

3Z30: DescriptionDIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor; CategoryDiscrete semiconductor diode; File Size171KB，3 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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3Z30 Overview

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
Is Samacsys	N
Other features	FORMED LEAD OPTIONS ARE AVAILABLE
Maximum breakdown voltage	33 V
Minimum breakdown voltage	27 V
Breakdown voltage nominal value	30 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	1500 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	3 W
Certification status	Not Qualified
Maximum reverse current	10 µA
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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