S9014B datasheet, PDF - EEWORLD Datasheet

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S9014B: Description100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size131KB，1 Pages; ManufacturerMicro Commercial Components (MCC)

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S9014B Overview

100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3

S9014B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compliant
Is Samacsys	N
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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MCC

Micro Commercial Components

TM

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

S9014

Features

•

TO-92 Plastic-Encapsulate Transistors

Capable of 0.4Watts(Tamb=25

O

C) of Power Dissipation.

Collector-current 0.1A

Collector-base Voltage 50V

Operating and storage junction temperature range: -55

O

C to +150

O

C

Marking Code: S9014

NPN Silicon

Transistors

TO-92

A

E

Pin Configuration

C

BE

B

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

Parameter

Collector-Base Breakdown Voltage

(I

C

=100uAdc, I

E

=0)

Collector-Emitter Breakdown Voltage

(I

C

=0.1mAdc, I

B

=0)

Emitter-Base Breakdown Voltage

(I

E

=100uAdc, I

C

=0)

Collector Cutoff Current

(V

CB

=50Vdc, I

E

=0)

Collector Cutoff Current

(V

CE

=35Vdc, I

B

=0)

Emitter Cutoff Current

(V

EB

=3.0Vdc, I

C

=0)

DC Current Gain

(I

C

=1.0mAdc, V

CE

=5.0Vdc)

Collector-Emitter Saturation Voltage

(I

C

=100mAdc, I

B

=5.0mAdc)

Base-Emitter Saturation Voltage

(I

C

=100mAdc, I

B

=5.0mAdc)

Transistor Frequency

(I

C

=10mAdc, V

CE

=5.0Vdc, f=30MHz)

Min

50

45

5.0

---

Max

---

0.1

Units

Vdc

uAdc

D

OFF CHARACTERISTICS

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

C

ON CHARACTERISTICS

h

FE

V

CE(sat)

V

BE(sat)

60

---

1000

0.3

1.0

---

Vdc

G

DIMENSIONS

SMALL-SIGNAL CHARACTERISTICS

f

T

150

---

MHz

DIM

A

B

C

D

E

G

INCHES

MIN

.170

.550

.010

.130

.010

CLASSIFICATION OF H

FE

Rank

Range

B

120-200

C

200-400

D

400-600

MAX

.190

.590

.020

.160

.104

MM

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

www.mccsemi.com

Revision: 3

2004/07/26

S9014B Related Products

	S9014B	S9014	S9014A	S9014D
Description	100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3	100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3	100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	45 V	45 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	60	60	400
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz
Base Number Matches	1	1	1	-

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