has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
These devices are
well suited for portable electronics applications.
Features
•
–6.8 A, –20V. R
DS(ON)
= 30 mΩ @ V
GS
= –4.5V
R
DS(ON)
= 38 mΩ @ V
GS
= –2.5V
R
DS(ON)
= 70 mΩ @ V
GS
= –1.8V
•
Low profile – 0.8 mm maximum
•
Fast switching
Applications
•
Load switch
•
DC/DC Conversion
•
RoHS compliant
PIN 1
GATE
S
D
SOURCE
5
6
7
8
4
3
2
1
G
D
D
D
D
D
MicroFET
3x1.9
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±8
(Note 1a)
Units
V
V
A
W
°C
–6.8
70
1.9
–55 to +150
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
65
208
°C/W
Package Marking and Ordering Information
Device Marking
506
Device
FDMB506P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2005 Fairchild Semiconductor Corporation
FDMB506P Rev C2(W)
FDMB506P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
I
D
= –250
µA
V
GS
= 0 V,
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –16 V,
V
GS
= ± 8 V,
V
GS
= 0 V
V
DS
= 0 V
Min Typ Max
–20
–13
–1
±100
Units
V
mV/°C
µA
nA
Off Characteristics
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
D
= –250
µA
V
DS
= V
GS
,
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –4.5 V, I
D
= –6.8 A
V
GS
= –2.5 V, I
D
= –2.5 A
V
GS
= –1.8 V, I
D
= –1.8 A
V
GS
= –4.5 V, I
D
= –6.8 A, T
J
=125°C
V
DS
= –5 V,
I
D
= –6.8 A
–0.4
–0.7
3
25
30
40
36
26
–1.5
V
mV/°C
30
38
70
44
mΩ
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
t
rr
Q
rr
Forward Transconductance
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
2216
351
167
2960
470
260
25
16
280
128
30
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6
Ω
14
8
175
80
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –6.8 A,
21
3.5
4.5
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
S
= –0.8 A
(Note 2)
–0.6
26
12
1.6
–1.2
48
22
A
V
nS
nC
I
F
= –6.8 A,
d
iF
/d
t
= 100 A/µs
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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