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FDMS8692 N-Channel PowerTrench
®
MOSFET
May 2009
FDMS8692
N-Channel PowerTrench
®
MOSFET
30V, 28A, 9.0m
Features
Max r
DS(on)
= 9.0m
Max r
DS(on)
= 14.0m
at V
GS
= 10V, I
D
= 12A
at V
GS
= 4.5V, I
D
= 10.5A
tm
General Description
The FDMS8692 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance.
Advanced Package and Silicon combination for
low r
DS(on)
and high efficiency
MSL1 robust package design
RoHS Compliant
Applications
Low Side for Synchronous Buck to Power Core Processor
Secondary Side Synchronous Rectifier
Low Side Switch in POL DC/DC Converter
Oring FET/ Load Switch
Top
Bottom
S
Pin 1
S
D
S
G
D
D
D
D
D
D
D
5
6
7
8
4
G
3 S
2 S
1 S
Power 56
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
I
D
-Continuous (Silicon limited)
-Continuous
-Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
T
C
= 25°C
T
A
= 25°C
(Note 1a)
(Note 3)
T
C
= 25°C
T
C
= 25°C
T
A
= 25°C
(Note 1a)
Parameter
Ratings
30
±20
28
48
12
120
72
41
2.5
-55 to +150
mJ
W
°C
A
Units
V
V
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
R
JC
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3.0
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS8692
Device
FDMS8692
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
©2009 Fairchild Semiconductor Corporation
FDMS8692 Rev.C4
1
www.fairchildsemi.com
FDMS8692 N-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250 A, V
GS
= 0V
I
D
= 250 A, referenced to 25°C
V
DS
= 24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
30
20
1
±100
V
mV/°C
A
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
r
DS(on)
g
FS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250 A
I
D
= 250 A, referenced to 25°C
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5, I
D
= 10.5A
V
GS
= 10V, I
D
= 12A, T
J
= 125°C
V
DD
= 10V, I
D
= 12A
1
1.8
-5.4
7.0
10.5
10.0
58
9.0
14.0
13.0
S
m
3
V
mV/°C
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
f = 1MHz
950
515
85
1.0
1265
685
130
2.8
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
DD
= 15V,
I
D
= 12A
V
DD
= 15V, I
D
= 12A,
V
GS
= 10V, R
GEN
= 6
9
3
19
2
15
8
2.7
2.1
18
10
34
10
21
11
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 2.1A
V
GS
= 0V, I
S
= 12A
I
F
= 12A, di/dt = 100A/ s
(Note 2)
0.7
0.8
29
14
1.2
1.2
47
25
V
V
ns
nC
NOTES:
1. R
JA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
JC
is guaranteed by design while R
CA
is determined by
the user's board design.
a. 50°C/W when mounted on a
1in
2
pad of 2 oz copper.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3. Starting T
J
= 25°C, L = 0.3mH, I
AS
= 22A, V
DD
= 30V, V
GS
= 10V.
©2009 Fairchild Semiconductor Corporation
FDMS8692 Rev.C4
2
www.fairchildsemi.com
FDMS8692 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
120
V
GS
= 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
20
40
60
80
100
120
I
D
,
DRAIN CURRENT(A)
V
GS
= 5V
V
GS
= 3.5V
V
GS
= 4V
V
GS
= 4.5V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
100
I
D
,
DRAIN CURRENT (A)
V
GS
= 5V
V
GS
= 4.5V
80
60
40
V
GS
= 3.5V
V
GS
= 4V
20
0
0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V
GS
= 10V
1
2
3
4
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
25
SOURCE ON-RESISTANCE
(
m
)
1.8
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.6
1.4
1.2
1.0
0.8
0.6
-75
I
D
= 12A
V
GS
= 10V
I
D
= 12A
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
20
r
DS(on)
, DRAIN TO
15
T
J
= 125
o
C
10
T
J
= 25
o
C
5
-50
-25
0
25 50 75 100 125 150
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
2
4
6
8
10
V
GS
,
GATE TO SOURCE VOLTAGE
(
V
)
Figure 3. Normalized On- Resistance
vs Junction Temperature
120
I
S
, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to
Source Voltage
300
100
100
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V
GS
= 0V
V
DD
= 5V
10
1
0.1
0.01
80
60
40
T
J
=
150
o
C
T
J
= -55
o
C
T
J
= 150
o
C
T
J
= 25
o
C
20
T
J
= 25
o
C
T
J
= -55
o
C
0
1
2
3
4
5
6
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDMS8692 Rev.C4
3
www.fairchildsemi.com
FDMS8692 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
10
V
GS
, GATE TO SOURCE VOLTAGE(V)
I
D
= 12A
2000
C
iss
8
6
4
2
0
0
4
8
Q
g
, GATE CHARGE(nC)
1000
V
DD
= 15V
CAPACITANCE (pF)
V
DD
= 10V
C
oss
V
DD
= 20V
C
rss
100
50
0.1
f = 1MHz
V
GS
= 0V
12
16
1
10
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
50
I
D
,
DRAIN CURRENT (A)
20
I
AS
, AVALANCHE CURRENT(A)
10
40
V
GS
= 10V
30
20
Limited by Package
V
GS
= 4.5V
T
J
= 25
o
C
T
J
= 125
o
C
10
R
JC
= 3
o
C/W
1
0.01
0.1
1
10
100
0
25
50
75
100
o
125
150
t
AV
, TIME IN AVALANCHE(ms)
T
C
,
CASE TEMPERATURE
(
C
)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
200
P
(
PK
)
,
PEAK TRANSIENT POWER (W)
100
I
D
, DRAIN CURRENT (A)
100
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10
1ms
10ms
THIS AREA IS
LIMITED BY r
DS(on)
1
10
100ms
1s
10s
DC
0.1
SINGLE PULSE
T
J
= MAX RATED
R
JA
= 125
o
C/W
T
A
= 25
o
C
1
0.5
-3
10
10
-2
0.01
0.01
0.1
1
10
100
10
-1
10
0
10
1
10
2
10
3
V
DS
, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
©2009 Fairchild Semiconductor Corporation
FDMS8692 Rev.C4
4
www.fairchildsemi.com
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