FDN338P
November 2013
FDN338P
P-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Features
•
–1.6 A, –20 V. R
DS(ON)
= 115 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 155 mΩ @ V
GS
= –2.5 V
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
SuperSOT
T M
-3 provides low R
DS(ON)
and 30% higher
power handling capability than SOT23 in the same
footprint
Applications
•
•
•
Battery management
Load switch
Battery protection
D
D
S
G
S
SuperSOT -3
TM
G
T
A
=25
o
C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
Parameter
Ratings
–20
±8
–1.6
–5
(Note 1a)
(Note 1b)
Units
V
V
A
W
°C
0.5
0.46
–55 to +150
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
338
Device
FDN338P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
©2001
Fairchild Semiconductor Corporation
FDN338P Rev F1(W)
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Min
–20
Typ
Max Units
V
Off Characteristics
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= –250
µA
Breakdown Voltage Temperature I
D
= –250
µA,
Referenced to 25°C
Coefficient
Zero Gate Voltage Drain Current
V
DS
= –16 V, V
GS
= 0 V
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
–16
–1
100
–100
mV/°C
µA
nA
nA
V
GS
= 8 V,
V
GS
= –8 V,
V
DS
= 0 V
V
DS
= 0 V
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
GS
V
GS
V
GS
V
GS
= –4.5 V, I
D
= –1.6 A
= –2.5 V, I
D
= –1.3 A
= –4.5 V, I
D
= –1.6 A, T
J
=125°C
= –4.5 V, V
DS
= –5 V
I
D
= –1.6 A
–0.4
–0.8
2.7
88
117
116
–1.5
V
mV/°C
115
155
165
mΩ
I
D(on)
g
FS
–5
6
A
S
V
DS
= –5 V,
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
451
75
33
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Notes:
1.
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
10
11
16
6.5
20
20
29
13
6.2
ns
ns
ns
ns
nC
nC
nC
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –1.6 A,
4.4
1.1
0.7
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= –0.42
(Note 2)
–0.42
–0.7
–1.2
A
V
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in
2
pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDN338P Rev F1(W)
FDN338P
Typical Characteristics
5
V
GS
= -4.5V
-3.5V
4
-I
D
, DRAIN CURRENT (A)
-2.5V
-2.0V
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
2
V
GS
= -2.0V
1.8
1.6
1.4
1.2
1
0.8
0
0.5
1
1.5
2
0
1
2
3
4
5
-I
D
, DRAIN CURRENT (A)
2.2
3
2
-2.5V
-3.0V
-3.5V
-4.5V
1
0
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.34
I
D
= -0.8 A
R
DS(ON)
ON-RESISTANCE (OHM)
,
1.8
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
I
D
= -1.6A
V
GS
= -4.5V
1.6
1.4
0.3
0.26
0.22
0.18
T
A
= 125
o
C
0.14
0.1
T
A
= 25
o
C
0.06
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
(
o
C)
125
150
T
J
, JUNCTION TEMPERATURE
Figure 3. On-Resistance Variation with
Temperature.
5
V
DS
= - 5V
4
-I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
125
o
C
25
o
C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V
GS
= 0V
1
T
A
= 125
o
C
0.1
25
o
C
0.01
-55
o
C
3
2
1
0.001
0
0.5
0.75
1
1.25
1.5
1.75
2
2.25
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN338P Rev F1(W)
FDN338P
Typical Characteristics
5
I
D
= -1.6A
-V
GS
, GATE-SOURCE VOLTAGE (V)
4
-15V
V
DS
= -5V
-10V
600
f = 1MHz
V
G S
= 0 V
C
ISS
400
500
3
300
2
200
1
C
O S S
100
C
R S S
0
0
1
2
3
4
5
Q
g
, GATE CHARGE (nC)
0
0
2
4
6
8
10
12
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
10
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
10ms
-I
D
, DRAIN CURRENT (A)
100ms
1
1s
10s
DC
0.1
V
GS
=-4.5V
SINGLE PULSE
R
θ
JA
= 270
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
1ms
20
Figure 8. Capacitance Characteristics.
SINGLE PULSE
R
θ
JA
= 270°C/W
T
A
= 25°C
15
10
5
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
θJA
(t) = r(t) x R
θJA
R
θ
JA
= 270 °C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN338P Rev F1(W)
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock™
AccuPower™
F-PFS™
®
AX-CAP
®
*
FRFET
®
®*
Global Power Resource
SM
PowerTrench
®
BitSiC™
GreenBridge™
PowerXS™
Build it Now™
TinyBoost
®
CorePLUS™
Green FPS™
Programmable Active Droop™
TinyBuck
®
CorePOWER™
Green FPS™ e-Series™
QFET
®
TinyCalc™
QS™
CROSSVOLT™
Gmax™
TinyLogic
®
Quiet Series™
CTL™
GTO™
TINYOPTO™
RapidConfigure™
Current Transfer Logic™
IntelliMAX™
TinyPower™
®
DEUXPEED
ISOPLANAR™
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
Saving our world, 1mW/W/kW at a time™
EcoSPARK
®
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
ESBC™
SmartMax™
MICROCOUPLER™
TRUECURRENT
®
*
SMART START™
MicroFET™
®
μSerDes™
Solutions for Your Success™
MicroPak™
SPM
®
MicroPak2™
Fairchild
®
®
STEALTH™
MillerDrive™
Fairchild Semiconductor
UHC
®
SuperFET
®
MotionMax™
FACT Quiet Series™
Ultra FRFET™
SuperSOT™-3
mWSaver
®
FACT
®
UniFET™
®
OptoHiT™
SuperSOT™-6
FAST
VCX™
OPTOLOGIC
®
SuperSOT™-8
FastvCore™
VisualMax™
OPTOPLANAR
®
SupreMOS
®
FETBench™
VoltagePlus™
SyncFET™
FPS™
XS™
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative / In Design
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
Preliminary
First Production
No Identification Needed
Obsolete
Full Production
Not In Production
京公网安备 11010802033920号
EEWORLD
