2SC3679
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switching Transistor)
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3679
900
800
7
5(
Pulse
10)
2.5
100(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.4A
I
C
=2A, I
B
=0.4A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
6
typ
75
typ
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
2SC3679
Unit
µ
A
µ
A
V
V
MHz
pF
20.0min
19.9
±0.3
4.0
a
b
ø3.2
±0.1
4.0max
V
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
125
I
C
(A)
2
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.3
I
B2
(A)
–1
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
5
max
t
f
(
µ
s)
1
max
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
5
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
( I
C
/I
B
= 5 )
C ol l e c t o r - E m i tt e r S at u r a ti o n Vo lt a ge V
CE( s a t)
(V )
B as e- Em i t t e r Sa t ur at i on Vol t ag e V
BE (s a t)
(V )
I
C
– V
B E
Temperature Characteristics
(Typical)
5
( V
CE
= 4 V )
700mA
600mA
500m A
2
C ol l e c t o r C ur r e nt I
C
( A)
300mA
3
C ol l e c t o r Cu r r e n t I
C
( A)
4
400 mA
4
3
emp
)
emp)
(Case
T
25˚C
200mA
ase
T
I
B
=100mA
Te
m
p)
25˚
C
–5 5 ˚ C
1
1
V
C E
( sa t )
0
0.03 0.05
0.1
0. 5
C
125˚C
(
a
se
0
0
1
2
3
4
1
5
10
0
0
0. 2
0.4
0.6
0.8
–55˚C (C
–55˚C (Case Temp)
25˚C (Case Temp)
e Temp)
125˚C (Cas
125˚
C (C
2
1
V
B E
( s at )
2
ase Tem
p)
1. 0
1.2
Co ll e ct o r -Em i t t er Vo l t ag e V
C E
(V)
Co l l ec to r C ur r en t I
C
( A )
B a s e - Em i t t o r Vo l t a g e V
B E
( V)
(V
C E
= 4 V )
50
S w i t c h i n g T i m e
t
on•
t
s tg•
t
f
(
µ
s )
D C C u r r e n t G ai n h
F E
10
t
s tg
V
CC
2 5 0 V
I
C
:I
B 1
: – I
B2
=2 :0 . 3: 1C o ns t.
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
t
o n
•t
s t g
• t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
2
125˚C
25˚C
5
1
–55 ˚C
0 .5
1
0 .5
t
on
0 .2
0.1
0.5
t
f
10
5
0.02
0.05
0.1
0. 5
1
5
1
5
0 .1
1
10
T i m e t( m s )
100
10 0 0
C ol l ec t or C urr en t I
C
(A )
C ol l ec t or C ur r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
C ol l e c t o r C u r r e n t I
C
( A)
10
10
1m
Reverse Bias Safe Operating Area
20
100
Pc – Ta Derating
s
s
s
5
Co l l e c t o r C u rr e n t I
C
( A )
0m
M ax im u m P o w e r Di s s i p a t i o n P
C
( W )
m
10
10
10
0
µ
µ
s
W
s
ith
DC
( Tc
In
fin
1
0.5
1
0.5
ite
=2
5
C)
he
50
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
0 .1
0.05
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than1%
0.01
5
10
50
10 0
5 00
1000
0 .0 1
50
1 00
50 0
10 0 0
3.5
0
W i t h o u t H e a ts i n k
0
25
50
75
10 0
125
150
C o l l ect o r - Em i t t er V ol ta ge V
C E
(V )
Col l ec t or - Em i tt e r Vol t ag e V
C E
( V)
A m b i e n t T em p e r a tu r e T a ( ˚ C )
68
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