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LH28F400BGHT-L10

Description
Flash, 256KX16, 100ns, PDSO48, TSOP-48
Categorystorage    storage   
File Size33KB,2 Pages
ManufacturerSHARP
Websitehttp://sharp-world.com/products/device/
Download Datasheet Parametric View All

LH28F400BGHT-L10 Overview

Flash, 256KX16, 100ns, PDSO48, TSOP-48

LH28F400BGHT-L10 Parametric

Parameter NameAttribute value
package instructionTSOP-48
Reach Compliance Codeunknown
Is SamacsysN
Maximum access time100 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee6
memory density4194304 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage2.7 V
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNOR TYPE
Base Number Matches1
P
RODUCT
I
NFORMATION
®
APPLICATIONS:
Pager
Notebook PC
POS
Set Top Box
DVD
Integrated Circuits
Group
LH28F400BG
4M (256K × 16)
SmartVoltage
Flash Memory
FEATURES
• SmartVoltage technology
– 2.7 V, 3.3 V or 5 V V
CC
– 2.7 V, 3.3 V, 5 V or 12 V V
PP
• High-performance access time
– 85 ns (5 V ±025 V), 90 ns (5 V ±0.5 V),
100 ns (3.3 V ±0.3 V), 120 ns (2.7 V – 3.6 V)
– 120 ns (5 V ±0.5 V), 130 ns (3.3 V ±0.3 V),
150 ns (2.7 V – 3.6 V)
• Operating temperature
– Commerical 0°C – +70°C
– Industrial -40°C – +85°C
• Enhanced data protection features
– Absolute protection with V
PP
= GND
– Block erase/word write lockout during power transitions
– Boot blocks protection with
WP
= V
IL
• Optimized array blocking architecture
– Two 4K-word boot blocks
– Six 4K-word parameter blocks
– Seven 32K-word main blocks
– Top or bottom boot locations
• Automated word write and block erase
– Command user interface
– Status register
• Extended cycling capability
– 100,000 block erase cycles
• Enhanced automated suspend options
– word write suspend to read
– block erase suspend to word write
– block erase suspend to read
• Low power management
– deep power-down mode
– automatic power savings mode
– Decreases I
CC
in static mode
• Industry-standard packaging
– 48-pin TSOP
– 44-pin PSOP
• Chip size packaging
– 48-ball CSP
• SRAM-compatible write interface
• ETOX
V nonvolatile flash technology
• Not designed or rated as radiation hardened
DESCRIPTION
SHARP’s LH28F400BG Flash memory with SmartVoltage tech-
nology is a high-density, low-cost, nonvolatile, read/write storage
solution for a wide range of applications. LH28F400BG can operate
at V
CC
= 2.7 V and V
PP
= 2.7 V. Its low voltage operation capability
realize battery life and suits for cellular phone application.
Its boot, parameter and main-blocked architecture, flexible voltage
and extended cycling provide for highly flexible component suit-
able for portable terminals and personal computers. Its enhanced
suspend capabilities provide for an ideal solution for code and data
storage applications. For secure code storage appli-cations, such
as networking, where code is either directly executed out of flash
or downloaded to DRAM, the LH28F400BG offers two levels of
protection: absolute protection with V
PP
at GND, selective hardware
boot block locking. These alternatives give designers ultimate
control of their code security needs.
The information for this document is from the LH28F400BG-L85/12 Product Preview, Rev. 0.95.
Copyright ©1998, Sharp Electronics Corp. All rights reserved. All tradenames are the registered property of their respective owners. Specifications are subject to change without notice.
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