specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
Features
•
21 A, 30 V
R
DS(ON)
= 4 mΩ @ V
GS
= 10 V
R
DS(ON)
= 5 mΩ @ V
GS
= 4.5 V
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
•
Fast switching
•
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Applications
•
Synchronous rectifier
•
DC/DC converter
5
6
7
8
Bottom-side
Drain Contact
4
3
2
1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
±20
(Note 1a)
Units
V
A
W
°C
21
60
3.0
1.5
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
40
0.5
°C/W
Package Marking and Ordering Information
Device Marking
FDS7088N3
2004
Fairchild Semiconductor Corporation
Device
FDS7088N3
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS7088N3 Rev D1 (W)
FDS7088N3
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
I
D
= 250
µA
V
GS
= 0 V,
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 24 V,
V
GS
=
±20
V,
V
GS
= 0 V
V
DS
= 0 V
Min
30
Typ
Max Units
V
Off Characteristics
25
10
±100
1
1.9
–6
3.0
3.7
4.4
112
3845
930
368
V
GS
= 15 mV,
(Note 2)
mV/°C
µA
nA
V
mV/°C
4
5
5.5
mΩ
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
I
D
= 250
µA
V
DS
= V
GS
,
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
I
D
= 21 A
I
D
= 19 A
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 21 A, T
J
= 125°C
V
DS
= 10 V,
I
D
= 21 A
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
3
g
FS
C
iss
C
oss
C
rss
R
G
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
t
rr
Q
rr
S
pF
pF
pF
Ω
27
23
99
58
48
ns
ns
ns
ns
nC
nC
nC
2.5
A
V
nS
nC
Dynamic Characteristics
f = 1.0 MHz
I
D
= 1 A,
R
GEN
= 6
Ω
1.4
15
13
62
36
Switching Characteristics
V
DD
= 15 V,
V
GS
= 10 V,
V
DS
= 15 V,
V
GS
= 5.0 V
I
D
= 21 A,
37
10
14
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= 2.5 A
Voltage
I
F
= 21 A,
Diode Reverse Recovery Time
d
iF
/d
t
= 100 A/µs
Diode Reverse Recovery Charge
(Note 2)
0.7
39
33
1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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