TIP120 datasheet, PDF - EEWORLD Datasheet

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TIP120: DescriptionPower Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size342KB，2 Pages; ManufacturerMicro Commercial Components (MCC)

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TIP120 Overview

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN

TIP120 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-220AB
package instruction	PLASTIC, TO-220, 3 PIN
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	60 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	1000
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	65 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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MCC

Micro Commercial Components

TM

omponents

20736

Marilla

Street Chatsworth

!"#

$ % !"#

TIP120

•

Features

Low collector-emitter saturation voltage

Amplifier applications -emitter shunt resistors

TO-220 compact package

Case Material: Molded Plastic.

Classification Rating 94V-0

UL Flammability

NPN Epitaxial

Darlington Transistors

Unit

V

A

W

O

C

O

C

Maximum Ratings

Symbol

V

CEO

V

CBO

V

EBO

I

CP

I

C

P

C

T

J

T

STG

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Peak Collector Current

Collector Current

Collector power dissipation

Junction Temperature

Storage Temperature

Rating

60

5.0

8.0

5.0

65

-55 to +150

TO-220

B

C

K

L

M

D

A

E

F

G

Electrical Characteristics @ 25 C Unless Otherwise Specified

O

I

1

2

3

J

N

H H

Symbol

Parameter

Collector-Emitter Breakdown Voltage

(I

C

=100mAdc, I

B

=0)

Collector-Base Cutoff Current

(V

CB

=60Vdc,I

E

=0)

Em

itter-Base Cutoff Current

(V

EB

=5.0Vdc, I

C

=0)

Collector-Emitter Cutoff Current

(V

CE

=30Vdc, I

B

=0)

Forward Current Transfer Ratio

(I

C

=0.5Adc, V

CE

=3.0Vdc)

Forward Current Transfer Ratio

(I

C

=3.0Adc, V

CE

=3.0Vdc)

Collector-Emitter Saturation Voltage

(I

C

=3.0Adc, I

B

=12mAdc)

Collector-Emitter Saturation Voltage

(I

C

=5.0Adc, I

B

=20mAdc)

Base-Emitter Saturation Voltage

(I

C

=3.0Adc, V

CE

=3.0Adc)

Min

60

---

Max

---

0.2

2.0

0.5

Units

Vdc

mAdc

A

B

C

D

E

F

G

H

I

J

K

L

M

N

OFF CHARACTERISTICS

V

(BR)CEO

I

CBO

I

EBO

I

CEO

PIN 1.

PIN 2.

PIN 3.

BASE

COLLECTOR

EMITTER

MM

14.22

9.65

2.54

5.84

9.65

------

12.70

2.29

0.51

0.30

3.53

3.56

1.14

2.03

15.88

10.67

3.43

6.86

10.67

6.35

14.73

2.79

1.14

0.64

4.09

4.83

1.40

2.92

ON CHARACTERISTICS

h

FE-1

h

FE-2

V

CE(sat)-1

V

CE(sat)-2

V

BE(sat)

1000

---

2.0

4.0

2.5

Vdc

INCHES

.560

.625

.380

.420

.100

.135

.230

.270

.380

.420

------

.250

.500

.580

.090

.110

.020

.045

.012

.025

.139

.161

.140

.190

.045

.055

.080

.115

Revision: 2

www.mccsemi.com

1 of 2

2006/05/16

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