Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 4 Pin, TO-111/I, 4 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Parts packaging code | TO-111 |
| package instruction | TO-111/I, 4 PIN |
| Contacts | 4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 10 A |
| Collector-emitter maximum voltage | 80 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 20 |
| JESD-30 code | O-MUPM-D4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power consumption environment | 52 W |
| Maximum power dissipation(Abs) | 52 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | SOLDER LUG |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 30 MHz |
| VCEsat-Max | 0.75 V |
| Base Number Matches | 1 |
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