IRG4CC30UB datasheet, PDF - EEWORLD Datasheet

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IRG4CC30UB: DescriptionInsulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER; CategoryDiscrete semiconductor The transistor; File Size34KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRG4CC30UB Overview

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER

IRG4CC30UB Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	WAFER
package instruction	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	ULTRA FAST SPEED
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Gate emitter threshold voltage maximum	6 V
JESD-30 code	O-XUUC-N
JESD-609 code	e0
Number of components	1
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Base Number Matches	1

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PD- 91771

IRG4CC30UB

IRG4CC30UB IGBT Die in Wafer Form

600 V

Size 3

Ultra-Fast Speed

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

CE (on)

(BR)CES

GE(th)

CES

GES

Description

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Guaranteed (Min/Max)

4.5V Max.

600V Min.

3.0V Min., 6.0V Max.

300 µA Max.

± 11µA Max.

Test Conditions

= 10A, T

= 25°C, V

= 15V

= 25°C, I

CES

= 250µA, V

= 0V

= V

, T

=25°C, I

=250µA

= 25°C, V

= 600V

= 25°C, V

= +/- 20V

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment:

Reference Standard IR packaged part ( for design ) : IRG4BC30U

Cr-Ni / V-Ag (1 kA-2kA-2.5kA )

99% Al, 1% Si (3 microns)

0.141" x 0.164"

150mm, with std. < 100 > flat

.015" + / -.003"

01-5225

100 Microns

0.25mm Diameter Minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

Die Outline

10/2/98

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