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L1050G-03

Description
5.2mm, 1 ELEMENT, INFRARED LED, 1050nm, ROHS COMPLIANT, PLASTIC PACKAGE-2
CategoryLED optoelectronic/LED    photoelectric   
File Size159KB,5 Pages
ManufacturerEpitex Inc
Websitehttp://www.epitex.com
Environmental Compliance
Download Datasheet Parametric View All

L1050G-03 Overview

5.2mm, 1 ELEMENT, INFRARED LED, 1050nm, ROHS COMPLIANT, PLASTIC PACKAGE-2

L1050G-03 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSINGLE
Maximum forward current0.1 A
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Optoelectronic device typesINFRARED LED
Nominal output power17 mW
peak wavelength1050 nm
shapeROUND
size5.2 mm
Base Number Matches1
epitex
Opto-Device & Custom LED
5
MOLD LED LAMP L1050G-03
Lead ( Pb ) Free Product – RoHS Compliant
L1050G-03
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
4) Package
(1) Type
(2) Resin Material
(3) Lead Frame
5mm
clear molding
Epoxy Resin
Soldered (Lead Frame)
GaAs
(2) Peak Wavelength 1050nm typ.
Infrared LED Lamp
L1050G-03
Infrared LED Lamp
L1050G-03 is a GaAs LED mounted on a lead frame with a clear epoxy lens.
On forward bias it emits a spectral band of radiation, which peaks at 1050nm.

Outer
dimension (Unit: mm)
Absolute
Maximum Ratings [Ta=25°C]
Item
Symbol
Power Dissipation
P
D
Forward Current
I
F
Pulse Forward Current
I
FP
Reverse Voltage
V
R
Thermal Resistance
R
thja
Junction Temperature
T
j
Operating Temperature
T
OPR
Storage Temperature
T
STG
Soldering Temperature
T
SOL
Maximum Rated Value
140
100
1000
5
250
100
-40 ~ +85
-40 ~ +100
265
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 265°C
Electro-Optical
Characteristics [Ta=25°C typ.]
Item
Symbol Condition
Forward Voltage
V
F
I
F
=50mA
Radiated Power
P
O
I
F
=50mA
Radiant Intensity
I
E
I
F
=50mA
Peak Wavelength
P
I
F
=50mA
Half Width

I
F
=50mA
Viewing Half Angle


I
F
50mA
Rise Time
tr
I
F
50mA
Fall Time
tf
I
F
50mA
Minimum
Typical
1.2
17
100
1050
33
±12
40
30
Maximum
1.4
Unit
V
mW
mW/sr
nm
nm
deg.
ns
ns
‡Radiated Power is measured by G8370-85.
‡Radiant
Intensity
is measured by Ando Optical Multi Meter AQ2140 & AQ2742.
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/

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