DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BRY56
Programmable unijunction
transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 21
Philips Semiconductors
Product specification
Programmable unijunction transistor
DESCRIPTION
Planar PNPN trigger device in a
TO-92; SOT54 plastic package.
APPLICATIONS
•
Switching applications such as:
– Motor control
– Oscillators
– Relay replacement
– Timers
– Pulse shapers, etc.
MSB033
handbook, halfpage
BRY56
PINNING
PIN
1
2
3
gate
anode
cathode
DESCRIPTION
1
anode
a
g
gate
2
3
k
cathode
MGL167
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
GA
I
A(AV)
P
tot
T
j
I
P
I
V
PARAMETER
gate-anode voltage
average anode current
total power dissipation
operating junction temperature
peak point current
valley point current
V
S
= 10 V; R
G
= 10 kΩ
V
S
= 10 V; R
G
= 10 kΩ
T
amb
≤
75
°C
CONDITIONS
−
−
−
−
−
2
MIN.
MAX.
70
175
300
150
0.2
−
UNIT
V
mA
mW
°C
µA
µA
1997 Jul 21
2
Philips Semiconductors
Product specification
Programmable unijunction transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
GA
I
A(AV)
I
ARM
I
ASM
dl
A
/dt
P
tot
T
stg
T
j
T
amb
PARAMETER
gate-anode voltage
average anode current
repetitive peak anode current
rate of rise of anode current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
t
p
= 10
µs; δ
= 0.01
I
A
≤
2.5 A
T
amb
≤
75
°C
non-repetitive peak anode current t
p
= 10
µs
CONDITIONS
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
70
175
2.5
3
20
300
+150
150
+150
BRY56
UNIT
V
mA
A
A
A/µs
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
CONDITIONS
VALUE
250
UNIT
K/W
thermal resistance from junction to ambient in free air
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
P
I
V
V
offset
I
GAO
I
GKS
V
AK
V
OM
t
r
PARAMETER
peak point current
valley point current
offset voltage
gate-anode leakage current
gate-cathode leakage current
anode-cathode voltage
peak output voltage
rise time
CONDITIONS
V
S
= 10 V; R
G
= 10 kΩ; see Fig.7
V
S
= 10 V; R
G
= 100 kΩ; see Fig.7
V
S
= 10 V; R
G
= 10 kΩ; see Fig.7
V
S
= 10 V; R
G
= 100 kΩ; see Fig.7
typical curve; I
A
= 0; see Fig.7
I
K
= 0; V
GA
= 70 V; see Fig.5
V
AK
= 0; V
KG
= 70 V; see Fig.6
I
A
= 100 mA
V
AA
= 20 V; C = 10 nF;
see Figs 8 and 9
V
AA
= 20 V; C = 10 nF; see Fig.9
MIN.
−
−
2
1
−
−
−
−
6
−
TYP.
−
−
−
−
V
P
−V
S
−
−
−
−
−
MAX.
200
60
−
−
−
10
100
1.4
−
80
UNIT
nA
nA
µA
µA
V
nA
nA
V
V
ns
1997 Jul 21
3
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56
handbook, full pagewidth
+40
V
BZY88-
C8V2
5 kΩ
100
µF
BY206
(2x)
R1
750
Ω
40 K
A
1 nF
D.U.T
10 kΩ
20
Ω
osc.
RG
VS
MBK189
I
P
and I
V
determined by value of R1.
1
R1
=
---- ; i.e. maximum voltage drop over R1 = 1 V.
I
A
Internal resistance of oscilloscope = 10 MΩ.
Fig.2 Measuring circuit for peak and valley point currents.
handbook, halfpage
+V
B
handbook, halfpage
IA
RG =
VAK
VS =
R1 R2
R1 R2
VB
R2
DUT
R1
DUT
R1
R1 R2
MBB699
MEA141
Fig.4
Fig.3 BRY56 with ‘program’ resistors R1 and R2.
Equivalent test circuit for
characteristics testing.
1997 Jul 21
4
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56
handbook, halfpage
DUT
I GAO
handbook, halfpage
I GKS
DUT
VGA
VGK
MBB697
MBB696
Fig.5
Equivalent test circuit for gate-anode
leakage current.
Fig.6
Equivalent test circuit for gate-cathode
leakage current.
IA
handbook, halfpage
handbook, halfpage
VAA
3.3
MΩ
DUT
16 kΩ
C
I(V)
I(P)
VS V(P)
VAK
MEA143
VO
20
Ω
27 kΩ
MBB698
Fig.7 Offset voltage.
Fig.8 Test circuit for peak output voltage.
1997 Jul 21
5
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